Array substrate for a liquid crystal display and method for fabricating thereof

    公开(公告)号:US20040227865A1

    公开(公告)日:2004-11-18

    申请号:US10862567

    申请日:2004-06-08

    Inventor: Kyo-Ho Moon

    CPC classification number: G02F1/136213 H01L27/1255

    Abstract: An array substrate for a liquid crystal display device includes a substrate, a plurality of thin film transistors formed on the substrate, each thin film transistor includes a gate electrode, a first gate insulation layer, a second gate insulation layer, an active layer, an ohmic contact layer, a source electrode and a drain electrode, a plurality of gate lines, a plurality of data lines disposed orthogonal to the plurality of gate lines, a plurality of pixel electrodes disposed at pixel regions defined by intersections of the plurality of gate lines and the plurality of data lines, each pixel electrode electrically contacting each drain electrode of the plurality of thin film transistors, and a plurality of storage capacitors each including a portion of each gate line as a first capacitor electrode, the first gate insulation layer as a dielectric layer, and a capacitor electrode electrically communicating with each pixel electrode and functioning as a second capacitor electrode with a portion of each pixel electrode.

    Method of manufacturing array substrate for use in liquid crystal display device
    2.
    发明申请
    Method of manufacturing array substrate for use in liquid crystal display device 有权
    用于液晶显示装置的阵列基板的制造方法

    公开(公告)号:US20020187574A1

    公开(公告)日:2002-12-12

    申请号:US10216219

    申请日:2002-08-12

    CPC classification number: H01L27/1255

    Abstract: A method is disclosed for manufacturing an array substrate for use in a display device. The method includes providing a base substrate, forming a gate line on the base substrate using a first mask, forming sequentially a gate insulating layer, a semiconductor layer and a metal layer over the base substrate and the gate line, patterning the metal layer using a second mask to form a data line and a metal portion on the semiconductor layer, forming a protection layer over the data line, the metal portion and the semiconductor layer, forming a photoresist pattern on the protection layer over the data line using a third mask to define a first structure, applying at least two separate etching steps on the first structure to leave the gate insulating layer of a uniform thickness over the gate line and to pattern layers below the photoresist pattern, and forming a pixel electrode over a portion of the gate insulating layer on the gate line using a fourth mask.

    Abstract translation: 公开了用于制造用于显示装置的阵列基板的方法。 该方法包括提供基底基板,使用第一掩模在基底基板上形成栅极线,在基底基板和栅极线上依次形成栅极绝缘层,半导体层和金属层,使用 第二掩模,以在半导体层上形成数据线和金属部分,在数据线,金属部分和半导体层上形成保护层,通过数据线在保护层上形成光致抗蚀剂图案,使用第三掩模 限定第一结构,在第一结构上施加至少两个单独的蚀刻步骤,以使栅极绝缘层在栅极线上方具有均匀的厚度,并且在光刻胶图案之下形成图案层,并且在栅极的一部分上形成像素电极 使用第四掩模在栅极线上的绝缘层。

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