公开(公告)号：JP2001110791A

公开(公告)日：2001-04-20

申请号：JP2000257171

申请日：2000-08-28

Applicant: LUCENT TECHNOLOGIES INC

Inventor： ADAMS THOMAS E ,  FREDERICK THOMAS S ,  JESSEN SCOTT ,  MCINTOSH JOHN M ,  VARTULI CATHERINE

IPC: H01L21/302 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To provide a pattern-moving process monitoring method in a semiconductor device manufacturing method. SOLUTION: A pattern feature formed on an etched semiconductor layer is installed in the collector 124 of an apparatus 110, such as an electron microscope, and a first amplitude modulation waveform intensity signal is obtained in a controller 132. First amplitude modulation waveform intensity signal is sampled, and the measurement value population of the critical dimension measurement value is extracted. The pattern feature is etched and is re-scanned. A second amplitude modulation waveform intensity signal is obtained and is similarly sampled, and the second measurement value population of the critical dimension measurement value is extracted. The first and second measurement value populations are mutually correlated. When correct adjustment is executed, when a higher harmonic component appears markedly in the edge part of the pattern feature, for example, it is compared with the known data accumulated in a database 139, the correlation value of etching process is obtained, and the tool 134 can be adjusted.