公开(公告)号：JPH09191151A

公开(公告)日：1997-07-22

申请号：JP34074396

申请日：1996-12-20

Applicant: LUCENT TECHNOLOGIES INC

Inventor： DAUTREMONT-SMITH WILLIAM ,  HAYES TODD ROBERT

IPC: H01S5/12 ,  H01S5/20 ,  H01S5/227 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a distributed feedback layer which is less in hole burning and chirping. SOLUTION: An epitaxial layer 20 is formed on the main surface of a semiconductor substrate 10 and a pair of silicon dioxide masks 31 and 32 is formed on the substrate 10 so that a fixed interval can be maintained between the masks 31 and 32. The widths of the masks 31 and 32 spatially change. It is effective when the epitaxial layer 20 has a refractive index which is different from that of the substrate 10 at the operating wavelength of a laser. Then the masks 31 and 32 are removed and the layer 20 is etched into stripes. The height of the diffraction grating stripes thus obtained spatially changes along the Y-direction expansion of the masks 31 and 32 and the coupling between the diffractive grating and an active layer also changes similarly. Therefore, a high-performance semiconductor laser can be manufactured by adjusting the light output of the laser.