公开(公告)号：JP2001217307A

公开(公告)日：2001-08-10

申请号：JP2000386204

申请日：2000-12-20

Applicant: LUCENT TECHNOLOGIES INC

Inventor： II-FEN CHAN

IPC: H01L21/76 ,  H01L21/312 ,  H01L21/762

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor deice possessed of an original insulation structure. SOLUTION: A semiconductor device (100) may include a substrate (110) where an insulation opening 210 is provided, a dielectric layer (310) of silicon oxide or the like formed inside the insulation opening (210), and a material (410) which is low in dielectric properties (K) and formed on the dielectric layer (310) and inside the insulation opening (210) to form an insulation structure (510) of the semiconductor device (100). The relative permittivity of material low in dielectric properties may be lower than that of a dielectric layer. Spin-on- glass material, carbonate, silk or other materials of low K can be used as the above material of low K.