公开(公告)号：CA2768225C

公开(公告)日：2014-02-18

申请号：CA2768225

申请日：2012-02-15

Applicant: LUXMUX TECHNOLOGY CORP

Inventor： DATTNER YONATHAN ,  YADID-PECHT ORLY

IPC: G01J3/12 ,  G01J3/433 ,  G01J3/44 ,  G02B6/12 ,  G02B27/10 ,  H01L31/16

Abstract: A Fourier Transform Infrared (FTIR) Spectrometer integrated in a CMOS technology on a Silicon-on-Insulator (SOI) wafer is disclosed. The present invention is fully integrated into a compact, miniaturized, low cost, CMOS fabrication compatible chip. The present invention may be operated in various infrared regions ranging from 1.1 µm to 15 µm or it can cover the full spectrum from 1.1 µm to 15 µm all at once. The CMOS-FTIR spectrometer disclosed herein has high spectral resolution, no movable parts, no lenses, is compact, not prone to damage in harsh external conditions and can be fabricated with a standard CMOS technology, allowing the mass production of FTIR spectrometers. The fully integrated CMOS-FTIR spectrometer is suitable for battery operation; any and all functionality can be integrated on a chip with standard CMOS technology. The disclosed invention for the FTIR spectrometer may also be adapted for a CMOS-Raman spectrometer.

公开(公告)号：SG192778A1

公开(公告)日：2013-09-30

申请号：SG2013061833

申请日：2012-02-14

Applicant: LUXMUX TECHNOLOGY CORP

Inventor： DATTNER YONATHAN ,  YADID-PECHT ORLY

Abstract: 5 A Fourier Transform Infrared (FTIR) Spectrometer integrated in a CMOS technology on a Silicon-on-Insulator (SOI) wafer is disclosed. The present invention is fully integrated into a compact, miniaturized, low cost, CMOS fabrication compatible chip. The present invention may be operated in various infrared regions ranging from 1.1 µm to 15 µm or it can cover the full spectrum from 1.1 µm to 15 µm all at once.10The CMOS-FTIR spectrometer disclosed herein has high spectral resolution, no movable parts, no lenses, is compact, not prone to damage in harsh external conditions and can be fabricated with a standard CMOS technology, allowing the mass production of FTIR spectrometers. The fully integrated CMOS-FTIR spectrometer is suitable for battery15 operation; any and all functionality can be integrated on a chip with standard CMOS technology. The disclosed invention for the FTIR spectrometer may also be adapted for a CMOS -Raman spectrometer.20Fig. 6b for publication

公开(公告)号：CA2768225A1

公开(公告)日：2012-05-24

申请号：CA2768225

申请日：2012-02-15

Applicant: LUXMUX TECHNOLOGY CORP

Inventor： DATTNER YONATHAN ,  YADID-PECHT ORLY

IPC: G01J3/12 ,  G01J3/433 ,  G01J3/44 ,  G02B6/12 ,  G02B27/10 ,  H01L31/16

Abstract: A Fourier Transform Infrared (FTIR) Spectrometer integrated in a CMOS technology on a Silicon-on-Insulator (SOI) wafer is disclosed. The present invention is fully integrated into a compact, miniaturized, low cost, CMOS fabrication compatible chip. The present invention may be operated in various infrared regions ranging from 1.1 µm to 15 µm or it can cover the full spectrum from 1.1 µm to 15 µm all at once. The CMOS-FTIR spectrometer disclosed herein has high spectral resolution, no movable parts, no lenses, is compact, not prone to damage in harsh external conditions and can be fabricated with a standard CMOS technology, allowing the mass production of FTIR spectrometers. The fully integrated CMOS-FTIR spectrometer is suitable for battery operation; any and all functionality can be integrated on a chip with standard CMOS technology. The disclosed invention for the FTIR spectrometer may also be adapted for a CMOS-Raman spectrometer.

公开(公告)号：EP2676109A4

公开(公告)日：2015-04-29

申请号：EP12747871

申请日：2012-02-14

Applicant: LUXMUX TECHNOLOGY CORP

Inventor： DATTNER YONATHAN ,  YADID-PECHT ORLY

IPC: G01J3/12 ,  G01J3/433 ,  G01J3/44 ,  G02B6/12 ,  G02B27/10 ,  H01L31/16

CPC classification number: G01J3/45 ,  C08L79/08 ,  G01J3/0259 ,  G01J3/44 ,  G01J3/4531 ,  G02B6/125 ,  G02B6/13 ,  G02B6/29344 ,  G02B6/2935