MICRO LED WITH WAVELENGTH CONVERSION LAYER
    6.
    发明申请
    MICRO LED WITH WAVELENGTH CONVERSION LAYER 审中-公开
    微波LED与波长转换层

    公开(公告)号:WO2014186214A1

    公开(公告)日:2014-11-20

    申请号:PCT/US2014/037399

    申请日:2014-05-08

    Abstract: A light emitting device and method of manufacture are described. In an embodiment, the light emitting device includes a micro LED device bonded to a bottom electrode, a top electrode in electrical contact with the micro LED device, and a wavelength conversion layer around the micro LED device. The wavelength conversion layer includes phosphor particles. Exemplary phosphor particles include quantum dots that exhibit luminescence due to their size, or particles that exhibit luminescence due to their composition.

    Abstract translation: 描述了一种发光器件及其制造方法。 在一个实施例中,发光器件包括结合到底部电极的微型LED器件,与微型LED器件电接触的顶部电极以及围绕微型LED器件的波长转换层。 波长转换层包括磷光体颗粒。 示例性荧光体颗粒包括由于其尺寸而显示发光的量子点或由于其组成而显示发光的颗粒。

    MICRO DEVICE TRANSFER HEAD WITH SILICON ELECTRODE
    8.
    发明申请
    MICRO DEVICE TRANSFER HEAD WITH SILICON ELECTRODE 审中-公开
    微电极传输头与硅电极

    公开(公告)号:WO2013176963A1

    公开(公告)日:2013-11-28

    申请号:PCT/US2013/041441

    申请日:2013-05-16

    Abstract: A micro device transfer head array and method of forming a micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect. A dielectric layer covers a top surface of each mesa structure.

    Abstract translation: 描述了从SOI衬底形成微器件传输阵列的微器件转移头阵列和方法。 在一个实施例中,微器件传送头阵列包括基底衬底和基底衬底上的图案化硅层。 图案化硅层可以包括硅互连和与硅互连电连接的硅电极阵列。 每个硅电极包括突出在硅互连上方的台面结构。 介电层覆盖每个台面结构的顶面。

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