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    OPTICAL MODULATOR USING SIMULTANEOUS PUSH-PULL DRIVE OF LINEAR AND QUADRATIC ELECTRO-OPTIC EFFECTS
    1.
    发明申请
    OPTICAL MODULATOR USING SIMULTANEOUS PUSH-PULL DRIVE OF LINEAR AND QUADRATIC ELECTRO-OPTIC EFFECTS 审中-公开
    光学调制器使用同步推挽式线性和二次电光效应

    公开(公告)号：WO0223257A3

    公开(公告)日：2002-06-13

    申请号：PCT/US0128785

    申请日：2001-09-14

    Applicant: MASSACHUSETTS INST TECHNOLOGY

    Inventor： BETTS GARY E ,  DONNELLY JOSEPH P ,  TAYLOR PATRICK J

    IPC: G02F1/225

    CPC classification number: G02F1/2257 ,  G02F2201/126

    Abstract: An electro-optic push-pull modulator requiring reduced high switching voltages through combinations of device structure and operation, causing linear and quadratic electro-optic effects to add. Such combinations of device structure and operation include combinations of crystal axis orientation, waveguide structure, electrode structure, electric field biasing, operating wavelengths, and optical polarizations. By inducing linear and quadratic electro-optic effects to add, significant refractive index changes can be realized with lower switching voltages, V pi . Furthermore, significant reduction in switching voltage for push-pull modulators can also be realized through combinations of device structure and operation effectively inducing solely the quadratic electro-optic effect.

    Abstract translation: 电光推挽调制器需要通过器件结构和操作的组合来降低高开关电压，从而导致线性和二次电光效应的增加。 器件结构和操作的这种组合包括晶轴取向，波导结构，电极结构，电场偏置，工作波长和光学偏振的组合。 通过诱导线性和二次电光效应进行相加，可以用较低的开关电压V pi实现显着的折射率变化。 此外，还可以通过器件结构和有效地仅引起二次电光效应的操作的组合来实现推挽调制器的开关电压的显着降低。

    NANOSTRUCTURED THERMOELECTRIC MATERIALS AND DEVICES
    2.
    发明申请
    NANOSTRUCTURED THERMOELECTRIC MATERIALS AND DEVICES 审中-公开
    纳米结构的热电材料和器件

    公开(公告)号：WO0193343A3

    公开(公告)日：2003-08-28

    申请号：PCT/US0117311

    申请日：2001-05-29

    Applicant: MASSACHUSETTS INST TECHNOLOGY

    Inventor： HARMAN THEODORE C ,  TAYLOR PATRICK J ,  WALSH MICHAEL P

    IPC: H01L29/12 ,  H01L29/24 ,  H01L35/16 ,  H01L35/26

    CPC classification number: B82Y10/00 ,  H01L29/127 ,  H01L29/245 ,  H01L35/16 ,  H01L35/26

    Abstract: Quantum-dot superlattice (QLSL) structures having improved thermoelectric properties are described. In one embodiment, PbSexTe1-x/PbTe QDSLs are provided having enhanced values of Seebeck coefficient and thermoelectric figure of merit (ZT) relative to bulk values. The structures can be combined into multi-chip devices to provide additional thermoelectric performance.

    Abstract translation: 描述了具有改善的热电特性的量子点超晶格（QLSL）结构。 在一个实施例中，提供PbSexTe1-x / PbTe QDSL，其相对于体积值具有增强的塞贝克系数和热电品质因数（ZT）值。 该结构可以组合成多芯片器件以提供额外的热电性能。

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