公开(公告)号：WO1989007833A2

公开(公告)日：1989-08-24

申请号：PCT/US1989000666

申请日：1989-02-17

Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY

Inventor： MASSACHUSETTS INSTITUTE OF TECHNOLOGY ,  CALAWA, Arthur, R. ,  SMITH, Frank, W. ,  MANFRA, Michael, J. ,  CHEN, Chang-Lee ,  HOLLIS, Mark, A. ,  DIADIUK, Vicky ,  LE, Han, O.

IPC: H01L21/203

CPC classification number: H01L29/517 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02631 ,  H01L21/02634 ,  H01L21/28587 ,  H01L21/8252 ,  H01L29/1075 ,  H01L29/66462 ,  H01L29/66863 ,  H01L29/66924 ,  H01L29/8128 ,  H01L31/09 ,  H01L31/184 ,  H01S5/0208 ,  H01S5/021 ,  H01S5/026 ,  H01S5/223 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S148/003 ,  Y10S148/025 ,  Y10S148/041 ,  Y10S148/056 ,  Y10S148/154 ,  Y10S438/971

Abstract: A new III-V buffer material is described which is produced by low temperature growth of III-V compounds by MBE that has unique and desirable properties, particularly for closely spaced, submicron gate length active III-V semiconductor devices, such as HEMT's, MESFET's and MISFET's and also for ultra-high-speed photoconductor swicthing devices. In the case of the III-V material, GaAs, the buffer is grown under arsenic stable growth conditions, at a growth rate of 1 micron/hour, and at a substrate temperature preferably in the range of 150 to about 300°C. The new material is crystalline, highly resistive, substantially optically inactive, and can be overgrown with high quality III-V active layers.