公开(公告)号：US20150228065A1

公开(公告)日：2015-08-13

申请号：US14175278

申请日：2014-02-07

Applicant: MATERIALS ANALYSIS TECHNOLOGY INC

Inventor： Sajal BIRING

IPC: G06T7/00 ,  G06T5/00

CPC classification number: G06T7/181 ,  G06T7/12 ,  G06T7/62 ,  G06T2207/10056 ,  G06T2207/30148

Abstract: An automatic calculation method for thickness calculation of a deposition layer in a Fin-type field-effect transistor (FinFET) is disclosed through mapping edge lines onto an Excel spreadsheet. The similar method is also applied to the thickness calculation of superlattice or multiple quantum well for a light emitting diode (LED). The edge lines are obtained and transformed from an electronic image taken by Transmission Electron Microscopy (TEM), Focus Ion Beam (FIB), Atomic Force Microscopy (AFM), or X-Ray Diffraction (XRD) of the device.

Abstract translation: 通过将边缘线映射到Excel电子表格上，公开了Fin型场效应晶体管（FinFET）中的沉积层的厚度计算的自动计算方法。 类似的方法也适用于发光二极管（LED）的超晶格或多量子阱的厚度计算。 从透射电子显微镜（TEM），聚焦离子束（FIB），原子力显微镜（AFM）或X射线衍射（XRD）获得的电子图像获得边缘线并进行变换。