公开(公告)号：WO1998020183A1

公开(公告)日：1998-05-14

申请号：PCT/US1997019263

申请日：1997-10-27

Applicant: SONY CORPORATION ,  MATERIALS RESEARCH CORPORATION

Inventor： SONY CORPORATION ,  MATERIALS RESEARCH CORPORATION ,  LO, Chi-Fung ,  DRAPER, Darryl

IPC: C23C14/34

CPC classification number: C22F1/04 ,  C23C14/3414

Abstract: A method of fabricating an alloy sputtering target having fine precipitates of the second phase material and small, randomly oriented and uniform grains. The new method includes solution treatment to minimize second-phase precipitate size, cryodeformation to prevent the formation of cubic structures and recrystallization to generate fine uniform grain sizes having a random orientation.

Abstract translation: 一种制造具有第二相材料的微细沉淀物和小的随机取向和均匀晶粒的合金溅射靶的方法。 新方法包括固溶处理以最小化第二相沉淀物尺寸，冷冻形成以防止形成立方结构并重结晶以产生具有随机取向的精细均匀晶粒尺寸。

公开(公告)号：WO1997007258A1

公开(公告)日：1997-02-27

申请号：PCT/US1996012712

申请日：1996-08-05

Applicant: MATERIALS RESEARCH CORPORATION

Inventor： MATERIALS RESEARCH CORPORATION ,  GILMAN, Paul, S. ,  HUNT, Thomas, J. ,  ANNAVARAPU, Suresh

IPC: C23C14/34

CPC classification number: C23C14/3407

Abstract: A method of forming a sputter target/backing plate assembly comprises the steps of: providing a target (16) fabricated from a first material having a coefficient of thermal expansion; providing a backing plate (12) fabricated from a second material having a coefficient of thermal expansion; providing a block (20) fabricated from a third material having a coefficient of thermal expansion; positioning the block (20) on one side of the backing plate (12); positioning the target (16) on the other side of the backing plate (12); and subjecting the target (16), backing plate (12) and block (20) to elevated temperature and pressure to bond the target (16), backing plate (12) and block (20) together. The third material is selected so as to have a coefficient of thermal expansion which counteracts the effects of the coefficients of thermal expansion of the first and second materials. The third material may be selected so as to have a coefficient of thermal expansion which is approximately the same as the coefficient of thermal expansion of the first material.

Abstract translation: 形成溅射靶/背板组件的方法包括以下步骤：提供由具有热膨胀系数的第一材料制成的靶（16）; 提供由具有热膨胀系数的第二材料制成的背板（12）; 提供由具有热膨胀系数的第三材料制成的块（20）; 将所述块（20）定位在所述背板（12）的一侧上; 将所述目标（16）定位在所述背板（12）的另一侧上; 并将目标（16），背板（12）和块（20）经受升高的温度和压力以将目标（16），背板（12）和块（20）结合在一起。 选择第三材料以具有抵消第一和第二材料的热膨胀系数的影响的热膨胀系数。 可以选择第三材料以具有与第一材料的热膨胀系数近似相同的热膨胀系数。

公开(公告)号：WO1996039548A1

公开(公告)日：1996-12-12

申请号：PCT/US1996007816

申请日：1996-05-28

Applicant: MATERIALS RESEARCH CORPORATION

Inventor： MATERIALS RESEARCH CORPORATION ,  FOSTER, Robert, F. ,  HILLMAN, Joseph, T. ,  ARORA, Rikhit

IPC: C23C14/58

CPC classification number: H01L21/321

Abstract: A titanium nitride film is annealed at a temperature less than 500 DEG C by subjecting said titanium nitride film to an RF created plasma generated from a nitrogen-containing gas in a rotating susceptor reactor. The formed film is comparable to a thin film annealed at significantly higher temperatures, making this process useful for integrated circuits containing aluminum elements.

Abstract translation: 通过在旋转的感受器反应器中对氮化钛膜进行由含氮气体产生的RF产生的等离子体，在低于500℃的温度下对氮化钛膜进行退火。 所形成的膜与在显着更高的温度下退火的薄膜相当，使得该方法对于含有铝元素的集成电路是有用的。

公开(公告)号：WO1996036065A1

公开(公告)日：1996-11-14

申请号：PCT/US1995015422

申请日：1995-11-27

Applicant: MATERIALS RESEARCH CORPORATION

Inventor： MATERIALS RESEARCH CORPORATION ,  HURWITT, Steven, D.

IPC: H01J37/34

CPC classification number: H01J37/3435 ,  H01J37/3408 ,  H01J37/3497

Abstract: A sputtering apparatus (10) is provided with a cathode assembly (21) formed of a cathode unit (22) having a moveable magnet assembly and a cooling water source therein, and a removable target assembly (23) that includes a replaceable target unit (25) and a removable and preferably reusable cooling jacket (40) that seals to the rear face (33) of the target unit and encloses a cooling cavity (45) therebetween. Ducts (50) are configured to automatically disconnect and reconnect the cooling cavity to the water source when the target assembly is removed from and reconnected in the cathode assembly. The target unit includes a volume of sputtering material on which is a front sputtering face (32), and has a recessed rim (34) surrounding the sputtering face. The rim is configured to form a vacuum seal to the wall of a sputtering chamber and a water seal to the cooling jacket. Thereby, the magnet assembly is isolated from contact with the cooling liquid. A central connection, preferably in the form of a projecting hub (35), is centered at the target unit back and connects to a shaft (65) in the cathode assembly to support the target material against distortion from pressure and heat variances, generally tending to force the center of the target into the processing chamber (13). Preferably, the target (25) is formed of an integral piece of sputtering material, where the material permits, and otherwise the rim and hub may be part of a backing plate (25b) bonded to the target material to form the target unit. In either event, the back of the target unit is intrinsically, or is coated or otherwise treated to be, impermeable to contamination from the cooling water.

Abstract translation: 溅射装置（10）设置有阴极组件（21），阴极组件（21）由阴极单元（22）形成，阴极单元（22）具有可移动的磁体组件和冷却水源，以及可拆卸的目标组件（23），其包括可替换的目标单元 25）和可拆卸且优选可重复使用的冷却套（40），其密封到目标单元的后表面（33）并且在其间包围冷却腔（45）。 管道（50）构造成当目标组件从阴极组件中移出并重新连接时，自动断开并重新连接冷却腔至水源。 目标单元包括溅射材料的体积，其上是前溅射面（32），并且具有包围溅射面的凹陷边缘（34）。 轮缘被配置成形成到溅射室的壁的真空密封和到冷却套的水封。 由此，磁体组件与冷却液接触隔离。 优选地以突出的轮毂（35）的形式的中心连接在目标单元的后面中心并且连接到阴极组件中的轴（65），以支撑目标材料抵抗来自压力和热变化的扭曲，通常趋于 以迫使目标物的中心进入处理室（13）。 优选地，靶（25）由材料允许的一体的溅射材料形成，否则边缘和轮毂可以是结合到目标材料的背板（25b）的一部分以形成目标单元。 在任何一种情况下，目标单元的背面是固有的或被涂覆的或以其它方式被处理为不可渗透的来自冷却水的污染物。

公开(公告)号：WO1996011495A1

公开(公告)日：1996-04-18

申请号：PCT/US1994013615

申请日：1994-11-29

Applicant: MATERIALS RESEARCH CORPORATION

Inventor： MATERIALS RESEARCH CORPORATION ,  JELINEK, Vaclav

IPC: H01L21/00

CPC classification number: H01L21/67109 ,  H01L21/68785

Abstract: A wafer heating chuck (10) includes a backplane (11) for mounting the wafer thereon. A rear surface of the backplane includes an outer annular recess (20) with an outer angled wall (22). An outer annular heater is located within the recess and has an outer surface complementarily angled with respect to the wall. An inner annular heater (30) resides inside the outer heater, adjacent the rear surface. A clamping member secured to the backplane includes inner (26) and outer (36) retainers which separately clamp the inner and outer heaters, respectively, to the backplane to assure solid to solid contact for optimum heat transfer therebetween. Sensors (52, 54) sense backplane temperature at the inner and outer regions. Coolant is directed through channels (44) in the backplane and through channels in a cooling ring (70) secured to a backplane to influence the temperature of the backplane. A controller (80) connects to the heaters, the sensors and coolant supplies for temperature profiling to achieve temperature uniformity during processing for a wafer (12) mounted to the backplane of the heating chuck.

Abstract translation: 晶片加热卡盘（10）包括用于将晶片安装在其上的背板（11）。 背板的后表面包括具有外角（22）的外环形凹部（20）。 外部环形加热器位于凹部内并且具有相对于壁互补成角度的外表面。 内部环形加热器（30）位于外部加热器内部，邻近后表面。 固定到背板的夹紧件包括分别将内加热器和外加热器分别夹紧到背板的内部（26）和外部（36）保持器，以确保固体与固体接触以在它们之间实现最佳的热传递。 传感器（52,54）感测内部和外部区域的背板温度。 冷却剂被引导通过背板中的通道（44）并且通过固定到背板的冷却环（70）中的通道来影响背板的温度。 控制器（80）连接到加热器，用于温度分布的传感器和冷却剂供应件，以在安装到加热卡盘的背板的晶片（12）的处理期间实现温度均匀性。

公开(公告)号：WO1996010724A1

公开(公告)日：1996-04-11

申请号：PCT/US1995012232

申请日：1995-09-22

Applicant: MATERIALS RESEARCH CORPORATION

Inventor： MATERIALS RESEARCH CORPORATION ,  KOSHAK, Daniel, R.

IPC: F27D05/00

CPC classification number: C04B41/009 ,  C04B35/52 ,  C04B41/0072 ,  C04B41/80 ,  C23C14/3414 ,  F27D5/0062

Abstract: A fixture (10) for holding a plurality of masking elements (28, 30) while the masking elements are being baked to remove impurities is disclosed. The masking elements (28, 30) are used to mask dies used for forming sputtering targets used to deposit thin films on a substrate. The fixture (10) includes a housing (12) having first and second end walls (22, 24) connected between first and second side walls (18, 20) wherein the first and second end and side walls form an interior aperture (16). In addition, the fixture (10) includes several slots (26) which are formed in the first and second side walls (18, 20) wherein each of the slots (26) are suitable for holding a single masking element (28, 30). In particular, the interior aperture (16) is of a sufficient size and the slots (26) are positioned such that suitable air circulation is provided between each of the masking elements (28, 30) to expose the masking elements to a predetermined temperature suitable for removing the impurities from the masking elements. Furthermore, the fixture (10) includes openings (32) formed in the end walls (22, 24) which enable handling of the fixture and provide additional air circulation.

Abstract translation: 公开了一种用于在掩蔽元件被烘烤以除去杂质的同时保持多个掩模元件（28,30）的夹具（10）。 掩模元件（28,30）用于掩模用于形成用于在衬底上沉积薄膜的溅射靶的模具。 固定装置（10）包括具有连接在第一和第二侧壁（18,20）之间的第一和第二端壁（22,24）的壳体（12），其中第一和第二端壁形成内孔（16） 。 另外，固定装置（10）包括形成在第一和第二侧壁（18,20）中的多个槽（26），其中每个槽（26）适于保持单个掩模元件（28,30） 。 特别地，内部孔（16）具有足够的尺寸并且狭槽（26）被定位成使得在每个掩蔽元件（28,30）之间提供合适的空气循环，以将掩模元件暴露于适当的预定温度 用于从掩蔽元件去除杂质。 此外，固定装置（10）包括形成在端壁（22,24）中的开口（32），其能够处理固定装置并提供额外的空气循环。

公开(公告)号：WO1996006201A1

公开(公告)日：1996-02-29

申请号：PCT/US1994013398

申请日：1994-11-22

Applicant: MATERIALS RESEARCH CORPORATION

Inventor： MATERIALS RESEARCH CORPORATION ,  LO, Chi-Fung ,  TURN, John

IPC: C23C14/34

CPC classification number: C23C14/3414 ,  C04B35/645 ,  Y10S425/812

Abstract: An apparatus and process for making metal oxide sputtering targets from volatile and thermally unstable metal oxide powder (11) by hotpressing the metal oxide powder (11) in a graphite die assembly (12) having a ceramic barrier sleeve (24) disposed therein to isolate the metal oxide powder (11) from the graphite die assembly (12) components. To avoid the drawbacks of retaining vapors and gases in the powdered target material during hot-pressing, a gas release device is disposed within the die cavity (19) to minimize the amount of trapped vapor and gas. Heat treating said powdered target starting material prior to loading said material into said die cavity to partially reduce said powder also reduces the amount of vapor and gas retained in the powdered target material during hot-pressing.

Abstract translation: 一种用于通过在其中设置有陶瓷阻挡套管（24）的石墨模头组件（12）中加热所述金属氧化物粉末（11）来从挥发性和热不稳定性金属氧化物粉末（11）制备金属氧化物溅射靶的装置和方法， 来自石墨模组件（12）的金属氧化物粉末（11）成分。 为了避免在热压期间将粉末状目标材料中的蒸汽和气体保持的缺点，气体释放装置设置在模腔（19）内，以最小化被捕获的蒸气和气体的量。 在将所述材料加载到所述模腔中之前对所述粉末靶材料进行热处理以部分地还原所述粉末还减少在热压期间保留在粉末状目标材料中的蒸气和气体的量。

公开(公告)号：WO1995033865A1

公开(公告)日：1995-12-14

申请号：PCT/US1995004127

申请日：1995-04-03

Applicant: MATERIALS RESEARCH CORPORATION

Inventor： MATERIALS RESEARCH CORPORATION ,  FOSTER, Robert, F. ,  HILLMAN, Joseph, T.

IPC: C23C16/02

CPC classification number: C23C8/02 ,  C23C8/36 ,  C23C16/02 ,  C23C16/34

Abstract: Using plasma enhanced chemical vapor deposition, various layers (29) can be deposited on semiconductor substrates (28) at low temperatures in the same reactor. When a titanium nitride film is required, a titanium film can be initially deposited using a plasma enhanced chemical vapor deposition wherein the plasma is created within 25 mm of the substrate surface, supplying a uniform plasma across the surface. The deposited film can be subjected to an ammonia anneal, again using a plasma of ammonia created within 25 mm of the substrate (28) surface, followed by the plasma enhanced chemical vapor deposition of titanium nitride by creating a plasma of titanium tetrachloride and ammonia within 25 mm of the substrate surface. This permits deposition film and annealing at relatively low temperatures less than 800 DEG C. When titanium is so deposited over a silicon surface, titanium silicide will form at the juncture which then can be nitrided and coated with titanium or titanium nitride using the plasma enhanced chemical vapor deposition of the present invention. Thus, the present method permits the formation of multiple layers of titanium, titanium nitride, titanium silicide over the surface of the substrate in the same reactor (20).

Abstract translation: 使用等离子体增强化学气相沉积，可以在同一反应器中的低温下将各种层（29）沉积在半导体衬底（28）上。 当需要氮化钛膜时，可以使用等离子体增强化学气相沉积来初始沉积钛膜，其中在衬底表面的25mm内产生等离子体，在整个表面上提供均匀的等离子体。 沉积的膜可以再次使用在衬底（28）表面的25mm内产生的氨等离子体进行氨退火，然后通过在四氯化钛和氨的等离子体内产生等离子体增强化学气相沉积氮化钛 25 mm的基板表面。 这允许沉积膜和在低于800℃的相对低的温度下进行退火。当钛沉积在硅表面上时，钛硅化物将在接合处形成，然后可以使用等离子体增强化学品氮化并涂覆钛或氮化钛 本发明的气相沉积。 因此，本方法允许在相同的反应器（20）中在衬底的表面上形成多层钛，氮化钛，硅化钛层。

公开(公告)号：WO1995026566A1

公开(公告)日：1995-10-05

申请号：PCT/US1994013759

申请日：1994-11-28

Applicant: MATERIALS RESEARCH CORPORATION

Inventor： MATERIALS RESEARCH CORPORATION ,  HURWITT, Steven ,  WAGNER, Israel

IPC: H01J37/34

CPC classification number: H01J37/3447 ,  H01J37/3408 ,  H01J37/3473

Abstract: A sputtering cathode assembly provides particularly uniform coatings. The assembly includes a sputtering target (10) and a collimator (20) positioned to lie between the target and a wafer (15) to be coated. A magnet assembly, preferably rotating, shapes the plasma to produce an erosion profile (12) that forms an erosion groove (18) around the periphery of the target (10) and a shallower erosion area interior of the groove (18) and at least about half as deep, and preferably between 0.6 and 0.75 as deep as the groove. The assembly enhances uniformity where collimator aspect ratios exceed approximately 0.5, and particularly where aspect ratios are from 1.0 to over to 2.0, and may vary over the life of the collimator and targets used therewith.

Abstract translation: 溅射阴极组件提供特别均匀的涂层。 组件包括溅射靶（10）和准直器（20），该准直器定位成位于靶和待涂覆的晶片（15）之间。 优选旋转的磁体组件使等离子体成形以产生侵蚀曲线（12），所述侵蚀曲线形成围绕靶（10）的周边的侵蚀槽（18）和凹槽（18）内部较浅的侵蚀区域，并且至少 大约一半深，优选地在0.6至0.75之间，与凹槽一样深。 当准直器长宽比超过约0.5时，并且特别是当纵横比为1.0至超过2.0时，该组件增强了均匀性，并且可以在与其一起使用的准直器和靶的寿命期间变化。

公开(公告)号：WO1995025265A1

公开(公告)日：1995-09-21

申请号：PCT/US1994006795

申请日：1994-06-15

Applicant: MATERIALS RESEARCH CORPORATION

Inventor： MATERIALS RESEARCH CORPORATION ,  HUNT, Thomas, J.

IPC: G01K03/14

CPC classification number: G01K3/14

Abstract: A fixture (10) for measuring the temperature of a chamber at a number of locations includes a body (11) sized for placement within the chamber, and a number of temperature probes (12) mounted on the body in orientations such that, when the body is placed within the chamber, the probes measure the temperature of the chamber at desired locations. The body also includes adjustable guides (16, 17) which engage the walls of the chamber to assist in positioning the body.

Abstract translation: 用于在多个位置处测量室的温度的固定装置（10）包括尺寸适于放置在室内的主体（11）以及安装在主体上的多个温度探针（12），其方向为： 身体放置在腔室内，探头在所需位置测量腔室的温度。 主体还包括可调节的引导件（16,17），其可与腔室的壁接合以帮助定位身体。