公开(公告)号：ID29277A

公开(公告)日：2001-08-16

申请号：ID20002296

申请日：2000-03-08

Applicant: MATSUSHITA ELECTRIC IND CO LTD

Inventor： WADA NAOKI ,  NORIKANE TETSUYA ,  NAKAI TADASHI

IPC: H01J1/304 ,  H01J3/18 ,  H01J9/02 ,  H01L27/04 ,  H01J21/16

Abstract: A field emission device (FED) comprising an amorphous substrate; impurity diffusion preventing layer; FET formed on a formation surface of a semiconductor layer made of amorphous silicon or polycrystalline silicon; one or more emitters made by etching the semiconductor layer of the FET drain region; and extraction electrode. The semiconductor layer is made by CVD process. The emitter array is formed within a ring or polygonal FET drain region, and surrounded by the ring or polygonal gate electrode and source electrode. The entire FET region is covered with an insulation layer and metal layer. This configuration provides uniform current emission characteristics among emitter chips, and achieves uniform electron emissions to all directions. Application of present FED to a flat panel display device achieves high picture quality, low power consumption, and low manufacturing cost.

公开(公告)号：JP2007248938A

公开(公告)日：2007-09-27

申请号：JP2006073809

申请日：2006-03-17

Applicant: Matsushita Electric Ind Co Ltd ,  松下電器産業株式会社

Inventor： HONDA KENICHI ,  NAKAI TADASHI ,  YAMAZAKI DAIZO ,  OI TAKANORI

IPC: G03B21/62 ,  G02B5/02

Abstract: PROBLEM TO BE SOLVED: To provide a transmission type screen which has high transmissivity and superior viewing angle characteristics. SOLUTION: The light transmission type screen which converges, diffuses, and transmits incident image light includes a light transmissive substrate 1 having a solid light shield layer 6 which absorbs external light, a spherical light diffusing lens 8 provided at a light shield layer opening portion 10, and a reflective layer 7 formed at a light shield layer angled portion, and a critical point position on the border between a reflective layer portion which totally reflects the incident light on a tapered surface of the solid light shield layer 6 and a spherical light diffusing lens portion which diffuses the incident light is disposed closer to the light transmissive flat plate substrate 1 than to the base position of the solid light shield layer 6. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种具有高透射率和优异的视角特性的透射型屏幕。 解决方案：会聚，扩散和透射入射的图像光的透光型屏幕包括具有吸收外部光的实心遮光层6的透光基板1，设置在遮光层上的球面光扩散透镜8 开口部分10和形成在遮光层成角度部分处的反射层7，以及在固体光屏蔽层6的锥形表面上完全反射入射光的反射层部分之间的边界上的临界点位置和 扩散入射光的球面光漫射透镜部分比固体光屏蔽层6的基底位置更靠近透光平板基板1设置。（C）2007，JPO＆INPIT

公开(公告)号：JP2007279558A

公开(公告)日：2007-10-25

申请号：JP2006108451

申请日：2006-04-11

Applicant: Matsushita Electric Ind Co Ltd ,  松下電器産業株式会社

Inventor： YAMAZAKI DAIZO ,  NAKAI TADASHI

IPC: G03B21/62

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method for a light shielding layer for a transmission type screen, by which the residue of the light shielding layer for the transmission type screen is reduced and light transmittance of the screen can be improved.
SOLUTION: The manufacturing method for the light shielding layer of the transmission type screen includes: a step of applying a black resin solution onto a mold and/or transparent base material; and a step of firmly bonding the mold and the transparent base material together, and curing the black resin solution, thereby transferring the mold pattern to the surface of the transparent base material. In this method, the light shielding layer for the transmission type screen is manufactured by heating the transparent base material at a temperature of Tg>Ts>Tm, wherein Ts is the temperature of the transparent base material, Tg is the glass transient temperature of the transparent base material, and Tm is the temperature of the mold.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于透射型屏幕的遮光层的制造方法，通过该方法可以减少透射型屏幕的遮光层的残留物，并且可以提高屏幕的透光率。 解决方案：透射型屏幕的遮光层的制造方法包括：将黑色树脂溶液涂布在模具和/或透明基材上的步骤; 以及使模具和透明基材牢固地结合在一起的步骤，并使黑色树脂溶液固化，从而将模具图案转印到透明基材的表面。 在该方法中，通过在Tg> Ts> Tm的温度下加热透明基材来制造透射型屏蔽用遮光层，其中，Ts为透明基材的温度，Tg为玻璃化转变温度 透明基材，Tm是模具的温度。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2004017516A

公开(公告)日：2004-01-22

申请号：JP2002176863

申请日：2002-06-18

Applicant: Matsushita Electric Ind Co Ltd ,  松下電器産業株式会社

Inventor： YAMANISHI TOSHIHIRO ,  NAKAI TADASHI

IPC: B41J2/045 ,  B41J2/055

CPC classification number: B41J2202/10

Abstract: PROBLEM TO BE SOLVED: To provide a design which can make an ink delivery amount at each channel constant even when the ink delivery amount is varied in particular as a result of an unequal deformation volume of bulkheads due to a difference of flexible stiffness of bulkheads of ink chambers in an ink jet head device which has two or more channel strings separated by bulkheads of piezoelectric elements to be mutually parallel, and discharges ink by displacing the bulkheads in response to an impressed voltage to electrodes formed at both faces of each channel.
SOLUTION: A substrate used as a foundation of the bulkhead is formed of the piezoelectric element. Electrodes are added to a part, or two or more points of an outer surface of the substrate. The ink delivery amount from each ink delivery opening can be made constant by displacing the substrate beforehand through voltage application to the additional electrodes in the design.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003115884A

公开(公告)日：2003-04-18

申请号：JP2001307674

申请日：2001-10-03

Applicant: MATSUSHITA ELECTRIC IND CO LTD

Inventor： SATO HIROAKI ,  NAKAI TADASHI ,  ONO TAIJI ,  IRITANI TADAMITSU

IPC: H04L27/148

Abstract: PROBLEM TO BE SOLVED: To provide a frequency shift keying demodulator, in which a modulated signal can be accurately demodulated in simple circuit configuration by a frequency shift keying system. SOLUTION: A PLL circuit is not used for processing for generating a demodulated baseband signal from an IF signal. Therefore, entire circuit configuration is simplified and further, since a signal and noise can be separated by a filter circuit, receiving characteristics can be improved.

公开(公告)号：JPS6388857A

公开(公告)日：1988-04-19

申请号：JP23352886

申请日：1986-10-01

Applicant: MATSUSHITA ELECTRIC IND CO LTD

Inventor： NAKAI TADASHI ,  ASANO TAKUYA

IPC: H01L27/08 ,  H01L27/092

Abstract: PURPOSE:To increase a current necessary to turn ON a parasitic transistor having a substrate as a base thereby to improve the latchup strength by forming the same conductivity type and high concentration impurity region as the substrate on the substrate and connecting the impurity region to a power terminal by a conductor. CONSTITUTION:A high concentration N-type impurity region 23 is formed on a low concentration N-type semiconductor substrate 1, and a low concentration N-type impurity region 24 is formed on the region 23, a high concentration N-type impurity region 25 which penetrates to the region 23 is formed thereon, a low concentration P-type impurity region 2, and source and drain regions 4 and 3 of high concentration P-type impurity regions are formed, and a conductive electrode 13 on the region 4 and a conductive electrode 26 on the region 25 are connected to a power terminal 20. The region having the same potential as the power source is formed in a wide range on the substrate 1 to reduce a resistance due to the substrate from the region 2 to the power source. A current necessary to turn ON the parasitic transistor is increased to improve the latchup strength.

公开(公告)号：JP2007272209A

公开(公告)日：2007-10-18

申请号：JP2007053803

申请日：2007-03-05

Applicant: Matsushita Electric Ind Co Ltd ,  松下電器産業株式会社

Inventor： SONE KOJI ,  HONDA KENICHI ,  MATSUI MASATOMO ,  OKADA YOSHINOBU ,  NAKAI TADASHI

IPC: G02B5/02 ,  G02B5/00 ,  G03B21/62

Abstract: PROBLEM TO BE SOLVED: To provide a light diffusion sheet which is for a transmission type screen, and which has excellent diffusion performance in such a way that an observer does not feel abnormal even when an image is observed while varying a viewing angle.
SOLUTION: The light diffusion sheet is equipped with: a light emitting side substrate 2 being a transparent substrate; light shielding bodies 3 with triangular shapes in cross sections arranged on one face of the light emitting side substrate 2 with an opening portion to be a light transmitting portion interposed in between; reflection lenses 7 disposed on slopes of the light shielding bodies 3 with triangular shapes in cross sections and formed with transparent resin layers with a first refractive index; a spherical refracting lens 8 formed on the opening portion 6 between adjacent light shielding bodies 3, formed with the transparent resin layer having the first refractive index; and a light incident side resin layer 5 covering the reflection lenses 7 and the spherical refracting lens 8, and formed with a transparent resin layer having a second refractive index which is higher than the first refractive index.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种用于透射型屏幕的光扩散片，并且其具有优异的扩散性能，使得即使在观察视角同时观察图像时观察者也不会感到异常 。 光散射片配备有：作为透明基板的发光侧基板2; 具有布置在发光侧基板2的一个面上的具有三角形形状的遮光体3，具有插入其间的透光部分的开口部分; 反射透镜7设置在具有三角形截面的遮光体3的斜面上，并形成有具有第一折射率的透明树脂层; 形成在相邻的遮光体3之间的开口部6上形成有具有第一折射率的透明树脂层的球面折射透镜8; 以及覆盖反射透镜7和球面折射透镜8的光入射侧树脂层5，并且形成有具有高于第一折射率的第二折射率的透明树脂层。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2002237252A

公开(公告)日：2002-08-23

申请号：JP2002034951

申请日：2002-02-13

Applicant: MATSUSHITA ELECTRIC IND CO LTD

Inventor： WADA NAOKI ,  NORIKANE TETSUYA ,  NAKAI TADASHI

IPC: H01J9/02

Abstract: PROBLEM TO BE SOLVED: To realize a cold electron emitting element capable of controlling emission characteristics of an isotropic and stable cold electron, by a simple manufacturing method. SOLUTION: This cold electron emitting element is composed of a field effect transistor(FET) formed on the grown surface obtained by growing a semiconductor layer 2 on a glass substrate 1 through a preventive layer 8 for diffusion of impurities, a conical emitter 10 having a sharpened tip, which is formed by applying an etching process to the semiconductor layer in an area serving as the drain area 6 of the FET, and an extraction electrode 11 to apply a high electric field to the emitter.

公开(公告)号：JP2000260299A

公开(公告)日：2000-09-22

申请号：JP6128399

申请日：1999-03-09

Applicant: MATSUSHITA ELECTRIC IND CO LTD

Inventor： WADA NAOKI ,  NORIKANE TETSUYA ,  NAKAI TADASHI

IPC: H01J1/304 ,  H01J3/18 ,  H01J9/02

Abstract: PROBLEM TO BE SOLVED: To provide a cold electron emitting element fabricated through a simple procedure capable of controlling the isotropic and stable cold electron emitting characteristics. SOLUTION: On a glass board 1, a semiconductor layer 2 is grown with an impurity dispersion preventing layer 8 interposed so that a field effect transistor(FET) is formed on the surface of growth, and the semiconductor layer of this FET in its portion to serve as a drain region 6 is subjected to etching so that a cone type emitter 10 is formed whose forefront is sharpened, and an intended cold electron emitting element is composed of the mentioned FET and cone type emitter 10, and a drawout electrode 11 which is to impress a high electric field on the emitter.

公开(公告)号：JPS60245280A

公开(公告)日：1985-12-05

申请号：JP10217984

申请日：1984-05-21

Applicant: MATSUSHITA ELECTRIC IND CO LTD

Inventor： NAKAI TADASHI

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/417

Abstract: PURPOSE:To obtain the MOS-LSI strong against electrostatic surge by a method wherein the difference in potential generated across both ends of a MOS gate oxide film by electrostatic surge is reduced by forming a capacitor composed of two electrodes connected to each of a MOS gate electrode and a drain impurity region. CONSTITUTION:A source region 2 and a drain region 3 which are P type impurity regions are formed in an N type semiconductor substrate 1, and conductive electrodes 5 and 6 are formed on both the regions, respectively. The conductive electrode 5 is connected to the power source terminal of a MOS-LSI, and the electrode 6 to the output terminal of the MOS-LSI. A gate oxide film 9 connecting the source region 2 and the drain region 3 is formed, and a dielectric film 12 continuous to the film 9 is formed on the drain region 3; then, the gate electrode 4 is formed on both the films. This manner enables the construction of capacitor Co connected in parallel with a capacitor Cg parasitizing to the overlap of the gate electrode 4 on the drain region 3 via gate oxide film 9 without formation of an electrode.