Abstract:
PROBLEM TO BE SOLVED: To obtain a ball lens fixing structure that enables an optical fiber and a ball lens to be aligned more easily and more accurately. SOLUTION: Two substrates 2, 3 are joined in a manner that the grooves (2b, 3b) provided in each joining face 2a, 3a of the two substrates 2, 3 are faced with each other to form a cavity 4. In the cavity 4, a first spring structure is installed including a pair of springs 19 arranged vertically symmetrically relative to the center axis 8, as is a second spring structure including a pair of springs 9 arranged horizontally symmetrically relative to the center axis 8. A ball lens 6 is fixedly held between the first and the second spring structures. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a packaged electronic part which is given a highly reliable sealing property by surely adhering a device with a protective member without specifying an adhesive agent. SOLUTION: The package electronic part is provided with a substrate 5, a device 1 formed or mounted on/to the substrate 5, and a transparent protective member 2 to cover and protect the device 1. A photo-curing material 3 is used to seal a space between the device 1 and the protective member 2 together with its periphery, and a light (ultraviolet ray) is given thereto from the upside of the protective member 2 to photo-cure the photo-curing material 3. Furthermore, a thermosetting material 4 is applied as to cover the photo-curing material 3 and to fit the protective member 2 to the substrate 5, and the whole body is thermally cured to make the packaged electronic part. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a matrix type optical switch in which a loss of light propagating on an optical path is suppressed, and method of manufacturing the matrix type optical switch. SOLUTION: The matrix type optical switch includes N×M movable mirrors R 1, 1 -R N, M disposed at crossings of optical paths (grooves) 2 rrayed in a grid shape and graded-index optical fibers Fr 1, 1 -Fr N-1, M , Fc 1, 1 -Fc N, M-1 inserted between adjacent mirrors R 1, 1 -R N, M , wherein the optical paths 2 are switched by putting the movable mirrors R 1, 1 -R N, M into and out of the crossings of the optical paths 2, and refractive index of the graded-index optical fibers Fr 1, 1 -Fr N-1, M , Fc 1, 1 -Fc N, M-1 are decreased diametrically from their center axis. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor structure having a movable part which is separated from a support substrate and composed of structurally integrated and electrically separated two or more parts. SOLUTION: The method for manufacturing a semiconductor structure has a recessed part forming process, in which a recessed part is formed by selectively removing a first substrate from a first main surface of the first substrate, a recessed part embedding process, in which an insulator is embedded to the recessed part, and a rear face etching process in which a protruding part of the first substrate having the embedded insulator is left behind by uniformly removing the first substrate from a second main surface arranged oppositely to the first main surface. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide an optical switch which can decrease insertion loss and cross talk. SOLUTION: The optical switch operates in such a manner that at least a pair of opposing optical waveguides is intersected with each other and the optical paths of light beams are switched by inserting and retracting a reflector into and from the intersection of the optical waveguides. In the state where the reflector is inserted into the intersection, the reflector is in a size larger than an ellipse having the diameter twice or more of the diameter of the light beam on the reflector with respect to the center of the light beam as the reference. Or, in the state where the reflector is retracted from the intersection, the reflector does not overlap the ellipse having the diameter twice the diameter of the light beam with respect to the center of the light beam as the reference. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide an electrostatic actuator for holding the displaced state of a needle even when a voltage applied between a movable electrode and a fixed electrode is eliminated and more saving a power consumption. SOLUTION: The electrostatic actuator comprises the movable electrode 2 provided on the needle 21 integrally formed through an elastic supporting body 22 at a fixed part 23 fixed on the surface of a supporting substrate 1, a fixed electrode 3 fixed on the supporting substrate 1 and made to face the movable electrode 2 at an interval so as to be capacitively coupled, a switch plate 4 erected on the needle 21 for passing through light when the needle 21 is at one position and interrupting the light when it is at the other position; and a holding means composed of a fixed engaging part 6 recess-projection connected with a movable engaging part 5 fixed to the supporting substrate 1 and projectingly provided from the needle 1. Corresponding to electrostatic force generated between the movable electrode 2 and the fixed electrode 3, the recess-projection engagement of the movable engaging part 5 and the fixed engaging part 6 is set and released and the needle 21 is displaced. COPYRIGHT: (C)2004,JPO
Abstract:
PROBLEM TO BE SOLVED: To provide a method for forming a diaphragm of a semiconductor pressure sensor whereby the semiconductor pressure sensor of predetermined sensitivity can be obtained at low cost. SOLUTION: According to this method for forming a diaphragm of a semiconductor pressure sensor, a semiconductor substrate 1 is etched, thereby forming a recessed part to be a diaphragm 11. In the method, fine particles 10 are sprayed at high speed from the side of a mask 9 via the mask opened only at a part where the recessed part is to be formed, thereby forming the recessed part. A side wall of the diaphragm 11 rises with an angle close to the right angle to the semiconductor substrate 1. The semiconductor pressure sensor of a fixed sensitivity can be manufactured at low cost. The method is superior in productivity with a large etching rate.
Abstract:
PROBLEM TO BE SOLVED: To prevent the generation of a void at the tip of a V-shaped groove, by a method wherein the side face and the bottom face of a semiconductor substrate are covered by a dielectric film having the fluidity at a high temperature, and a single crystal semiconductor island, formed in the semiconductor substrate in such a manner that its surface is exposed, is provided. SOLUTION: A V-shaped groove 4a is formed on both sides of the front surface of a single crystal silicon substrate 4, a BPSG film 2 is formed as a dielectric film having fluidity at a high temperature, it is reflowed in a diffusion furnace, and the tip part of the V-shaped groove so rounded. A thick polysilicon layer, which becomes a semiconductor substrate 1, is deposited on the BPSG film 2. A single crystal silicon island 3 as the single crystal semiconductor island, on which the side face and the bottom face are covered by the BPSG film, is formed by polishing the single crystal silicon substrate 4 until the polysilicon which is embedded to the V-shaped groove 4a is exposed and the substrate 1 is polished. As a result, the polysilicon, which becomes the substrate 1 on the tip part of the V-shaped groove 4a, is filled up easily, and the generation of void can be prevented.
Abstract:
PROBLEM TO BE SOLVED: To prevent malfunction when an excess optical signal is generated from a light emitting diode. SOLUTION: This relay is provided with a light emitting diode 1, a photo diode array 2 receiving the optical signal from the light emitting diode 1, an output MOSFET 3 whose gate and source receive the optical electromotive force of the photo diode array 2, a 1st MOSFET 4 of a normally-on type relay whose gate connects to a cathode of the photo diode array 2, a high resistive element 9 connected between a source of the output MOSFET 3 and a cathode of the photo diode array 2, and a resistive element 10 connected between a source of the 1st MOSFET 4 and a cathode of the photo diode array 2.
Abstract:
PURPOSE:To prevent the breaking of an electrostatic induction thyristor due to the steep increase of current. CONSTITUTION:The anode currents of an electrostatic induction thyristor 9 are increased suddenly when an on signal is output from a gate driving-signal source 1, and a MOSFET 6 is turned on when the product L (dIA/dt) of the inductance L of an inductor 10 and the rate of time change (dIA/dt) of anode currents IA, is made larger than the threshold value Vth of the MOSFET 6. Consequently, currents fed from a DC power supply 2 to the electrostatic induction thyristor 9 are made to flow through the MOSFET 6. Turn-off currents are extracted from the gate of the electrostatic induction thyristor 9 by a capacitor 7 being charged for an on period at the same time, and the electrostatic induction thyristor 9 is brought to an off state, thus protecting the thyristor 9.