公开(公告)号：EP0748112B1

公开(公告)日：2000-03-08

申请号：EP96114314.6

申请日：1993-12-27

Applicant: MATSUSHITA ELECTRONICS CORPORATION

Inventor： Keijirou, Itakura ,  Toshihide, Nobusada ,  Yasuyuki, Toyoda ,  Yukio, Saitoh ,  Noburo, Kokusenya ,  Ryouichi, Nagayoshi ,  Hironori, Tanaka ,  Masayoshi, Ozaki

IPC: H04N3/15 ,  H04N5/225

CPC classification number: H04N5/37213 ,  H04N5/343 ,  H04N5/3454 ,  H04N5/3728

公开(公告)号：EP0748112A2

公开(公告)日：1996-12-11

申请号：EP96114314.6

申请日：1993-12-27

Applicant: MATSUSHITA ELECTRONICS CORPORATION

Inventor： Keijirou, Itakura ,  Toshihide, Nobusada ,  Yasuyuki, Toyoda ,  Yukio, Saitoh ,  Noburo, Kokusenya ,  Ryouichi, Nagayoshi ,  Hironori, Tanaka ,  Masayoshi, Ozaki

IPC: H04N3/15

CPC classification number: H04N5/37213 ,  H04N5/343 ,  H04N5/3454 ,  H04N5/3728

Abstract: A solid state image sensor comprising a matrix of photosensitive elements adapted to accumulate signal charges corresponding to at least two different aspect ratios, a plurality of vertical shift registers disposed adjacent to columns of said photosensitive elements and adapted to transfer said signal charges in a vertical direction, a storage region for storing signal charges from said vertical shift registers and transferring them in a vertical direction and a horizontal shift register for transferring the signal charges in a horizontal direction, said storage region comprising a group of transfer gate electrodes of which either the last transfer gate electrode or a plurality of transfer gate electrodes including said last gate electrode are electrically independent of the remainder of transfer gate electrodes.

Abstract translation: 一种固态图像传感器，包括适于累积对应于至少两个不同宽高比的信号电荷的光敏元件矩阵;多个垂直移位寄存器，其布置成与所述感光元件的列相邻，并且适于在垂直方向上传送所述信号电荷 ，用于存储来自所述垂直移位寄存器的信号电荷并沿垂直方向传送它们的存储区域和用于在水平方向上传送信号电荷的水平移位寄存器，所述存储区域包括一组传输门电极，其中最后一个 传输栅电极或包括所述最后栅电极的多个传输栅电极与传输栅电极的其余部分电独立。

公开(公告)号：EP0748112A3

公开(公告)日：1997-09-17

申请号：EP96114314.6

申请日：1993-12-27

Applicant: MATSUSHITA ELECTRONICS CORPORATION

Inventor： Keijirou, Itakura ,  Toshihide, Nobusada ,  Yasuyuki, Toyoda ,  Yukio, Saitoh ,  Noburo, Kokusenya ,  Ryouichi, Nagayoshi ,  Hironori, Tanaka ,  Masayoshi, Ozaki

IPC: H04N3/15

CPC classification number: H04N5/37213 ,  H04N5/343 ,  H04N5/3454 ,  H04N5/3728

Abstract: A solid state image sensor comprising a matrix of photosensitive elements adapted to accumulate signal charges corresponding to at least two different aspect ratios, a plurality of vertical shift registers disposed adjacent to columns of said photosensitive elements and adapted to transfer said signal charges in a vertical direction, a storage region for storing signal charges from said vertical shift registers and transferring them in a vertical direction and a horizontal shift register for transferring the signal charges in a horizontal direction, said storage region comprising a group of transfer gate electrodes of which either the last transfer gate electrode or a plurality of transfer gate electrodes including said last gate electrode are electrically independent of the remainder of transfer gate electrodes.