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    Method of producing thin film transistor
    2.
    发明公开
    Method of producing thin film transistor 有权
    Dünnschichttransistor-Herstellungsverfahren

    公开(公告)号：EP0936668A3

    公开(公告)日：2001-09-12

    申请号：EP99301126.1

    申请日：1999-02-16

    Applicant: Matsushita Electronics Corporation

    Inventor： Ishihara, Tomoaki ,  Kobayashi, Kazunori ,  Nobusada, Toshihide

    IPC: H01L21/84 ,  H01L21/336 ,  H01L21/60 ,  H01L21/768

    CPC classification number: H01L27/1288 ,  H01L21/76895 ,  H01L24/11 ,  H01L27/1214 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/013

    Abstract: On the surface of an insulating substrate 1 on which a transistor is formed, a first interlayer insulation film 8 is provided, and a first contact hole 9 and a metal interconnection layer 10 are formed. A second interlayer insulation film 11 is formed covering the above items, and a second contact hole 12 and a barrier metal 13 are formed. After a first hole 14 for bonding pad is formed, a third interlayer insulation film 15 is provided, and then a third contact hole 16 and a second hole 17 for bonding pad are formed. A transparent electro-conductive film 18 is formed covering the holes 14, 16 and 17, After that, a portion of the transparent electro-conductive film 18 locating above the holes 14, 17 for bonding pad is removed to have the metal interconnection layer 10 exposed. The exposed metal interconnection layer 10 is used as bonding pad 20. This contributes to reliable bonding of bonding wires onto the bonding pad.

    Abstract translation: 在其上形成有晶体管的绝缘基板1的表面上，设置有第一层间绝缘膜8，并且形成第一接触孔9和金属互连层10。 形成覆盖上述物品的第二层间绝缘膜11，形成第二接触孔12和阻挡金属13。 在形成用于焊盘的第一孔14之后，设置第三层间绝缘膜15，然后形成用于焊盘的第三接触孔16和第二孔17。 形成覆盖孔14,16,17的透明导电膜18，然后去除位于用于接合焊盘的孔14,17上方的透明导电膜18的一部分，以使金属互连层10 裸露。 暴露的金属互连层10用作接合焊盘20.这有助于将接合线可靠地接合到接合焊盘上。

    Method for driving a solid state image sensor
    7.
    发明公开
    Method for driving a solid state image sensor 失效
    Verfahren zur Steuerung einesFestkörper-Bildsensors

    公开(公告)号：EP0869664A1

    公开(公告)日：1998-10-07

    申请号：EP98109663.9

    申请日：1993-11-18

    Applicant: MATSUSHITA ELECTRONICS CORPORATION, LTD.

    Inventor： Itakura, Keijirou ,  Nobusada, Toshihide ,  Toyoda, Yasuyuki ,  Saitoh, Yukio ,  Kokusenya, Nohoru ,  Nagayoshi, Kyouichi ,  Tanaka, Hironori ,  Ozaki, Masayoshi

    IPC: H04N3/15

    CPC classification number: H04N5/3722 ,  H04N5/353 ,  H04N5/357 ,  H04N5/3658

    Abstract: The method for driving a solid state image sensor according to the invention comprises

    a step of reading signal charges from a cohort of a plurality of photosensitive elements (11-18) arranged in a matrix form,
    a step of transferring said signal charges to a storage region (42,62,82),
    a step of transferring the signal charges accumulated in said storage region (42,62,82) after completion of transfer and storage of signal charges from all the photosensitive elements (11-18) by repetition of the above-mentioned two steps, and
    a step of transferring said signal charges within a horizontal shift register (43,63,83) for outputting.

    Abstract translation: 根据本发明的用于驱动固态图像传感器的方法包括从以矩阵形式布置的多个光敏元件（11-18）的队列中读取信号电荷的步骤，将所述信号电荷传送到存储器 区域（42,62,82），在完成从所有感光元件（11-18）转移和存储信号电荷之后，通过重复的方式转移积累在所述存储区域（42,62,82）中的信号电荷的步骤 上述两个步骤，以及在水平移位寄存器（43,43,83）内传送所述信号电荷以进行输出的步骤。

    Solid state image sensor device and its driving method
    8.
    发明公开
    Solid state image sensor device and its driving method 失效
    Festkörper-Bildsensor und Ansteuerverfahren dazu。

    公开(公告)号：EP0604954A1

    公开(公告)日：1994-07-06

    申请号：EP93120967.0

    申请日：1993-12-27

    Applicant: MATSUSHITA ELECTRONICS CORPORATION

    Inventor： Itakura, Keijirou ,  Nobusada, Toshihide ,  Toyoda, Yasuyuki ,  Saitoh, Yukio ,  Kokusenya, Noburo ,  Nagayoshi, Ryouichi ,  Tanaka, Hironori ,  Ozaki, Masayoshi

    IPC: H04N5/225 ,  H04N3/15

    CPC classification number: H04N5/37213 ,  H04N5/343 ,  H04N5/3454 ,  H04N5/3728

    Abstract: A solid state image sensor comprising a matrix of photosensitive elements adapted to accumulate signal charges corresponding to at least two different aspect ratios, a plurality of vertical shift registers disposed adjacent to columns of the photosensitive elements for a vertical transfer of the signal charges and a plurality of horizontal shift registers corresponding to the respective aspect ratios and disposed in parallel with each other for a horizontal transfer of the signal charges from the vertical shift registers.
    As a horizontal shift register exclusive to each aspect ratio is provided in the above manner, it is no longer necessary to superimpose the signal outputs of a plurality of buffer amplifiers so that a picture signal corresponding to the desired aspect ratio can be easily read out.

    Abstract translation: 一种固态图像传感器，包括适于累积对应于至少两个不同宽高比的信号电荷的光敏元件的矩阵;多个垂直移位寄存器，其被设置为邻近所述感光元件的列，用于信号电荷的垂直传输;以及多个 的水平移位寄存器对应于相应的宽高比并且彼此并联设置，用于水平传送来自垂直移位寄存器的信号电荷。 由于以上述方式提供了每个宽高比专用的水平移位寄存器，所以不再需要叠加多个缓冲放大器的信号输出，使得可以容易地读出对应于所需宽高比的图像信号。

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