公开(公告)号：EP0921576A3

公开(公告)日：1999-11-03

申请号：EP98122700.2

申请日：1998-11-30

Applicant: MATSUSHITA ELECTRONICS CORPORATION

Inventor： Oka, Hitoshi ,  Ito, Yutaka

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/66757 ,  H01L29/78621

Abstract: On the polycrystal semiconductor film 3 formed on the insulating substrate 1, the source 6 and drain 7 in LDD structure having a low concentration region 4 and a high concentration region 5 are formed. The region 4 has a low impurity concentration, and the region 5 has a high impurity concentration. The length of the low concentration region 4 measured from the edge of gate insulating film 9 is not smaller than the average grain size of the polycrystal semiconductor film 3. The LCD device employing the TFT thus constructed is free from white spots (micro brighter spots) in a high temperature atmosphere.

公开(公告)号：EP0921576A2

公开(公告)日：1999-06-09

申请号：EP98122700.2

申请日：1998-11-30

Applicant: MATSUSHITA ELECTRONICS CORPORATION

Inventor： Oka, Hitoshi ,  Ito, Yutaka

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/66757 ,  H01L29/78621

Abstract: On the polycrystal semiconductor film 3 formed on the insulating substrate 1, the source 6 and drain 7 in LDD structure having a low concentration region 4 and a high concentration region 5 are formed. The region 4 has a low impurity concentration, and the region 5 has a high impurity concentration. The length of the low concentration region 4 measured from the edge of gate insulating film 9 is not smaller than the average grain size of the polycrystal semiconductor film 3. The LCD device employing the TFT thus constructed is free from white spots (micro brighter spots) in a high temperature atmosphere.

Abstract translation: 在形成于绝缘基板1上的多晶半导体膜3上，形成具有低浓度区4和高浓度区5的LDD结构中的源极6和漏极7。 区域4的杂质浓度低，区域5的杂质浓度高。 从栅极绝缘膜9的边缘测量的低浓度区域4的长度不小于多晶半导体膜3的平均晶粒尺寸。采用如此构造的TFT的LCD装置没有白点（微亮点） 在高温的气氛中。