公开(公告)号：US20010020709A1

公开(公告)日：2001-09-13

申请号：US09797987

申请日：2001-03-05

Applicant: Matsushita Electronics Corporation

Inventor： Keisaku Nakao ,  Akihiro Matsuda ,  Yasufumi Izutsu ,  Toyoji Ito ,  Takumi Mikawa ,  Toru Nasu ,  Yoshihisa Nagano ,  Keisuke Tanaka ,  Toshie Kutsunai

IPC: H01L029/92 ,  H01L027/108

CPC classification number: H01L28/55

Abstract: The semiconductor device of the invention includes a capacitor device, which is formed on a substrate and which includes a capacitive lower electrode, a capacitive insulating film made of an insulating metal oxide film and a capacitive upper electrode. An interlevel insulating film having an opening reaching the capacitive upper electrode is formed over the capacitor device. A metal interconnection including a titanium film is formed over the interlevel insulating film so as to be electrically connected to the capacitive upper electrode through the opening. An anti-diffusion film having conductivity is formed between the capacitive upper electrode and the metal interconnection for preventing titanium atoms composing the titanium film of the metal interconnection from passing through the capacitive upper electrode and diffusing into the capacitive insulating film.

Abstract translation: 本发明的半导体器件包括形成在基板上的电容器器件，其包括电容式下电极，由绝缘金属氧化物膜制成的电容绝缘膜和电容上电极。 在电容器装置上形成具有到达电容上电极的开口的层间绝缘膜。 在层间绝缘膜上形成包括钛膜的金属互连，以便通过开口与电容上电极电连接。 在电容上电极和金属互连之间形成具有导电性的防扩散膜，以防止构成金属互连的钛膜的钛原子通过电容上电极并扩散到电容绝缘膜。

公开(公告)号：US20020182802A1

公开(公告)日：2002-12-05

申请号：US10194323

申请日：2002-07-15

Applicant: MATSUSHITA ELECTRONICS CORPORATION

Inventor： Keisuke Tanaka ,  Yoshihisa Nagano ,  Toyoji Ito ,  Takumi Mikawa

IPC: H01L021/00 ,  H01L021/8242 ,  H01L021/20

CPC classification number: H01L28/55 ,  H01L21/02052 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/76816

Abstract: A capacitor includes lower electrode, capacitive insulating film, upper electrode and passivation film that are formed in this order on a substrate. The capacitive insulating film is made of an insulating metal oxide, the metal oxide being a ferroelectric or a dielectric with a high relative dielectric constant. At least one contact hole is formed in the passivation film to connect the lower electrode to an interconnect for the lower electrode or the upper electrode to an interconnect for the upper electrode. The opening area of the contact hole is equal to or smaller than 5 nullm2.

Abstract translation: 电容器包括在基板上依次形成的下电极，电容绝缘膜，上电极和钝化膜。 电容绝缘膜由绝缘金属氧化物制成，金属氧化物是铁电体或具有高相对介电常数的电介质。 在钝化膜中形成至少一个接触孔，以将下电极与下电极或上电极的互连连接成上电极的互连。 接触孔的开口面积等于或小于5mum2。