公开(公告)号：AU3734493A

公开(公告)日：1993-10-05

申请号：AU3734493

申请日：1993-03-03

Applicant: MCNC

Inventor： JONES GARY WAYNE ,  SUNE CHING-TZONG

IPC: H01J1/30 ,  H01J9/02

公开(公告)号：EP0630518A4

公开(公告)日：1995-04-19

申请号：EP93906238

申请日：1993-03-03

Applicant: MCNC

Inventor： JONES GARY WAYNE ,  SUNE CHING-TZONG

IPC: H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J29/87 ,  H01J31/12 ,  H01J1/30

CPC classification number: H01J3/021 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/319

Abstract: A vertical microelectronic field emitter (10) includes a conductive top portion (15) and a resistive bottom portion (16) in an elongated column (12) which extends vertically from a horizontal substrate (11). An emitter electrode (17) may be formed at the base of the column, and an extraction electrode (18) may be formed adjacent the top of the column. The elongated column reduces the parasitic capacitance of the microelectronic field emitter to provide high speed operation, while providing uniform column-to-column resistance. The field emitter may be formed by first forming tips (15) on the face of a substrate and then forming trenches (22) in the substrate (11) around the tips to form columns (12) in the substrate, with the tips lying on top of the columns. The trenches are filled with a dielectric (19) and a conductor layer (18) is formed on the dielectric. Alternatively, trenches may be formed in the face of the substrate (11) with the trenches defining columns (12) in the substrate. Then, tips (15) are formed on top of the columns. The trenches are filled with dielectric and the conductor layers is formed on the dielectric to form the extraction electrodes.