公开(公告)号：EP1662020A1

公开(公告)日：2006-05-31

申请号：EP06004367.6

申请日：2004-06-29

Applicant: MEC COMPANY LTD.

Inventor： Otani, Minoru ,  Hisada, Jun ,  Mawatari, Toyoki

IPC: C23C16/00

CPC classification number: C23C18/08

Abstract: A method for producing a copper thin film, comprising:

heating a copper compound at a temperature of 100°C to 300°C in a non-oxidizing atmosphere of copper; and
cooling the copper compound to 60°C or lower to form a copper thin film,
the copper compound having a decomposition temperature in a range of 100°C to 300°C and comprising one unit or an oligomer or polymer of units represented by the following Formula (1):

         [R 1 COO] n [NH 3 ] m CuX 1 p      (1)

where n is 1 to 3; m is 1 to 3; p is 0 to 1; n pieces of R 1 respectively represent the following Formula (2), CH 2 X 2 , CH 2 X 2 (CHX 2 ) q , NH 2 , or H, and may be the same or different from each other, or n is 2 and two pieces of [R 1 COO] represent together the following Formula (3); R 2 , R 3 , and R 4 are respectively CH 2 X 2 , CH 2 X 2 (CHX 2 ) q , NH 2 , or H; R 5 is -(CHX 2 ) r -; X 2 is H, OH, or NH 2 ; r is 0 to 4; q is 1 to 4; and X 1 is NH 4 + , H 2 O or solvent molecules


         [-OOC-R 5 -COO-]     (3).

Abstract translation: 一种铜薄膜的制造方法，其特征在于，在铜的非氧化性气氛中，在100〜300℃的温度下加热铜化合物， 并将铜化合物冷却至60℃以下，形成铜薄膜，所述铜化合物的分解温度为100℃〜300℃，所述铜化合物为1单元或低聚物或由 以下公式（1）：€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ[R 1 COO] n [NH 3] m CuX 1 p€ƒ€ƒ€ƒ€ƒ（1）其中 n为1〜3; m为1〜3; p为0〜1; n个R 1分别表示下式（2），CH 2 X 2，CH 2 X 2（CHX 2）q，NH 2或H，可以相同也可以不同，n为2 和两个[R 1 COO]一起表示下式（3）。 R 2，R 3和R 4分别为CH 2 X 2，CH 2 X 2（CHX 2）q，NH 2或H; R 5为 - （CHX 2）r - ; X 2是H，OH或NH 2; r为0〜4; q为1〜4; 和X 1是NH 4 +，H 2 O或溶剂分子€ƒ€ƒ€ƒ€ƒ€ƒ[-OOC-R 5 -COO-]€ƒ€ƒ€ƒ€ƒ （3）。

公开(公告)号：EP1496061B1

公开(公告)日：2008-12-03

申请号：EP04015238.1

申请日：2004-06-29

Applicant: MEC COMPANY LTD.

Inventor： Otani, Minoru ,  Hisada, Jun ,  Mawatari, Toyoki

IPC: C07F1/00 ,  C23C16/00

CPC classification number: C23C18/08

公开(公告)号：EP1662020B1

公开(公告)日：2008-05-14

申请号：EP06004367.6

申请日：2004-06-29

Applicant: MEC COMPANY LTD.

Inventor： Otani, Minoru ,  Hisada, Jun ,  Mawatari, Toyoki

IPC: C23C16/00

CPC classification number: C23C18/08

公开(公告)号：EP1496061A3

公开(公告)日：2005-01-26

申请号：EP04015238.1

申请日：2004-06-29

Applicant: MEC COMPANY LTD.

Inventor： Otani, Minoru ,  Hisada, Jun ,  Mawatari, Toyoki

IPC: C07F1/00 ,  C23C16/00

CPC classification number: C23C18/08

Abstract: The present invention provides a copper compound having a decomposition temperature in a range of 100°C to 300°C and including one unit or a plurality of connected units represented by the following Formula (1):[R 1 COO] n [NH 3 ] m CuX 1   p where n is 1 to 3; m is 1 to 3; p is 0 to 1; n pieces of R 1 respectively represent the following Formula (2), CH 2 X 2 , CH 2 X 2 (CHX 2 ) q , NH 2 , or H, and may be the same or different from each other, or n is 2 and two pieces of [R 1 COO] represent together the following Formula (3); R 2 , R 3 , and R 4 are respectively CH 2 X 2 , CH 2 X 2 (CHX 2 ) q , NH 2 , or H; R 5 is -(CHX 2 ) r -; X 2 is H, OH, or NH 2 ; r is 0 to 4; q is 1 to 4; and X 1 is NH 4 + , H 2 O, or solvent molecules [-OOC-R 5 -COO-] According to the above configuration, there are provided a copper compound capable of forming a copper thin film required for producing an electronic device or the like safely, inexpensively, and easily, and a method for producing a copper thin film using the copper compound.

公开(公告)号：EP1496061A2

公开(公告)日：2005-01-12

申请号：EP04015238.1

申请日：2004-06-29

Applicant: MEC COMPANY LTD.

Inventor： Otani, Minoru ,  Hisada, Jun ,  Mawatari, Toyoki

IPC: C07F1/00 ,  C23C16/00

CPC classification number: C23C18/08

Abstract: The present invention provides a copper compound having a decomposition temperature in a range of 100°C to 300°C and including one unit or a plurality of connected units represented by the following Formula (1):

        [R 1 COO] n [NH 3 ] m CuX 1   p      (1)

where n is 1 to 3; m is 1 to 3; p is 0 to 1; n pieces of R 1 respectively represent the following Formula (2), CH 2 X 2 , CH 2 X 2 (CHX 2 ) q , NH 2 , or H, and may be the same or different from each other, or n is 2 and two pieces of [R 1 COO] represent together the following Formula (3); R 2 , R 3 , and R 4 are respectively CH 2 X 2 , CH 2 X 2 (CHX 2 ) q , NH 2 , or H; R 5 is -(CHX 2 ) r -; X 2 is H, OH, or NH 2 ; r is 0 to 4; q is 1 to 4; and X 1 is NH 4 + , H 2 O, or solvent molecules


        [-OOC-R 5 -COO-]     (3).

According to the above configuration, there are provided a copper compound capable of forming a copper thin film required for producing an electronic device or the like safely, inexpensively, and easily, and a method for producing a copper thin film using the copper compound.

Abstract translation: 本发明提供分解温度在100℃〜300℃范围内且含有1个或多个下述式（1）所示的连接单元的铜化合物。[R1COO] n [NH3] mCuX1 p （1）其中n是1至3; m是1至3; p是0到1; n个R 1分别表示下述式（2），CH 2 X 2，CH 2 X 2（CHX 2）q，NH 2或H，它们可以相同也可以不同，或者n为2，两个[R1COO] 下面的公式（3）; R2，R3和R4分别为CH2X2，CH2X2（CHX2）q，NH2或H; R5是 - （CHX2）r-; X2是H，OH或NH2; r是0至4; q是1至4; X1是NH4 +，H2O或溶剂分子[-OOC-R5-COO-]（3）。 根据上述结构，可以提供能够安全且廉价且容易地形成电子器件等的制造所需的铜薄膜的铜化合物以及使用该铜化合物的铜薄膜的制造方法。