ETCHING LIQUID AND ETCHING METHOD
    1.
    发明公开
    ETCHING LIQUID AND ETCHING METHOD 审中-公开
    蚀刻液体和蚀刻方法

    公开(公告)号:EP3257969A1

    公开(公告)日:2017-12-20

    申请号:EP16748997.0

    申请日:2016-01-21

    CPC classification number: C23F1/26 C23F1/44 H01L21/32133 H05K3/108

    Abstract: An object of the present invention is to provide: an etching liquid which is capable of etching titanium selectively in the presence of copper, and is further low in toxicity and excellent in storage stability; and an etching method using this etching liquid. The etching liquid of the present invention which is a liquid includes at least one acid selected from the group consisting of sulfuric acid, hydrochloric acid, and trichloroacetic acid, and at least one organic sulfur compound selected from the group consisting of a thioketone compound and a thioether compound, and makes it possible to etch titanium selectively in the presence of copper.

    Abstract translation: 本发明的目的在于提供:在铜的存在下能够选择性蚀刻钛的蚀刻液,毒性更低,保存稳定性优异, 以及使用该蚀刻液的蚀刻方法。 作为液体的本发明的蚀刻液包含选自由硫酸,盐酸和三氯乙酸组成的组中的至少一种酸,以及选自由硫酮化合物和硫醇化合物组成的组中的至少一种有机硫化合物 硫醚化合物,并且使得有可能在铜的存在下选择性地蚀刻钛。

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