公开(公告)号：WO1996004680A1

公开(公告)日：1996-02-15

申请号：PCT/US1995009968

申请日：1995-07-21

Applicant: MICROCHIP TECHNOLOGY, INC.

Inventor： MICROCHIP TECHNOLOGY, INC. ,  JACKSON, Daniel, J.

IPC: H01L21/44

CPC classification number: H01L21/76819 ,  Y10S438/978

Abstract: This disclosure is directed to a method of producing a smooth surface for a dielectric coating (34) that is located above the surface of semiconductor substrate (10) containing doped regions (26, 32, 34) of a semiconductor device. Sharp edges (40, 42) formed in the dielectric coating (34) during certain semiconductor processing steps are removed using a deposition process to deposit a separate insulating layer (48) on the dielectric coating (34) containing the sharp edges (40, 42) followed by an annealing operation and the subsequent removal of the separate insulating layer (48) to permit the subsequent formation of electrodes (50, 52, 54) on a smooth surface of the dielectric coating (34).

Abstract translation: 本公开涉及一种制造用于介电涂层（34）的平滑表面的方法，所述介电涂层位于包含半导体器件的掺杂区域（26,32,34）的半导体衬底（10）的表面上方。 在某些半导体处理步骤中形成在电介质涂层（34）中的尖锐边缘（40,42）使用沉积工艺去除，以在包含尖锐边缘（40,42）的电介质涂层（34）上沉积单独的绝缘层（48） ），然后进行退火操作，随后移除单独的绝缘层（48）以允许随后在电介质涂层（34）的光滑表面上形成电极（50,52,54）。