FAIL-SAFE NON-VOLATILE MEMORY PROGRAMMING SYSTEM AND METHOD THEREFOR
    1.
    发明申请
    FAIL-SAFE NON-VOLATILE MEMORY PROGRAMMING SYSTEM AND METHOD THEREFOR 审中-公开
    失效安全非易失性存储器编程系统及其方法

    公开(公告)号:WO1997049085A1

    公开(公告)日:1997-12-24

    申请号:PCT/US1997006531

    申请日:1997-04-12

    CPC classification number: G11C16/225 G11C5/141

    Abstract: The present invention relates to a fail-safe non-volatile memory programming system. The system uses a high voltage charging capacitor (16) to store a charge for programming a memory device. A second charging capacitor (30) is used for supplying power to the control logic (26) used for programming the memory device. If power is removed during a programming cycle, the charge stored in the two capacitors is sufficient to complete the programming cycle.

    Abstract translation: 本发明涉及故障安全非易失性存储器编程系统。 该系统使用高压充电电容器(16)来存储用于对存储器件进行编程的电荷。 第二充电电容器(30)用于向用于编程存储器件的控制逻辑(26)供电。 如果在编程周期中断电,则存储在两个电容器中的电荷足以完成编程周期。

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