公开(公告)号：WO2021002883A1

公开(公告)日：2021-01-07

申请号：PCT/US2019/052662

申请日：2019-09-24

Applicant: MICROCHIP TECHNOLOGY INC.

Inventor： MCCOLLUM, John L. ,  XUE, Fengliang

IPC: G11C13/00 ,  G11C29/04 ,  G11C29/44

Abstract: A ReRAM memory cell includes a ReRAM element, a programming circuit coupled to the ReRAM element and defining a programming circuit path in the ReRAM memory cell, and an erase circuit coupled to the ReRAM element and defining an erase circuit path in the ReRAM memory cell. The programming circuit path is separate from the erase circuit path.

公开(公告)号：WO2021045795A1

公开(公告)日：2021-03-11

申请号：PCT/US2019/060500

申请日：2019-11-08

Applicant: MICROCHIP TECHNOLOGY INC.

Inventor： MCCOLLUM, John L.

IPC: G11C29/00

Abstract: A method for providing error correction for a memory array includes for each memory word stored in a data memory portion of the memory array (12) having at least one bit error, storing in an error PROM (24) error data identifying a memory address for the data word in the data memory portion, a bit position of each bit error, and correct bit data for each bit error, monitoring memory addresses presented to the data PROM, if a memory address presented to the data memory portion is an identified memory address, reading from the error PROM (24) the bit position of each bit error and the correct bit data for each bit error, and substituting the correct bit data into each identified bit position of a sense amplifier (16) reading data from the data memory portion. A counter (42) is used decode multiple bit errors in a data word which allows separate entries being programmed in the PROM read decoder section (30) for each bit error in a data word.