公开(公告)号：EP0901162A1

公开(公告)日：1999-03-10

申请号：EP98116880.0

申请日：1998-09-07

Applicant: MICROCHIP TECHNOLOGY INC.

Inventor： Amand, Roger D. ST. ,  Deutscher, Neil F. ,  Ma, Robert P.

IPC: H01L21/762 ,  H01L21/314 ,  H01L21/32

CPC classification number: H01L21/76202 ,  H01L21/3145 ,  H01L21/32

Abstract: A method is disclosed for forming narrow thermal silicon dioxide side isolation regions in a semiconductor substrate and MOS or CMOS semiconductor devices fabricated by this method. A thin oxynitride lateral diffusion barrier to oxygen is used in conjunction with a polysilicon buffering stress relief layer on the surface of a semiconductor substrate prior to the field oxidation process to restrict lateral silicon dioxide expansion thereby permitting the creation of narrow thermal silicon dioxide side isolation regions in the semiconductor substrate.

Abstract translation: 一种方法是游离缺失盘用于在通过该方法制造的半导体衬底和MOS或CMOS半导体器件形成窄热二氧化硅侧的隔离区。 薄的氧氮化物的横向扩散的阻隔氧气结合使用与之前的场氧化处理后的半导体基板的表面上的多晶硅缓冲应力消除层来限制侧向二氧化硅扩张从而允许窄热二氧化硅侧隔离区的创建 基板在半导体。