公开(公告)号：WO1991008914A1

公开(公告)日：1991-06-27

申请号：PCT/US1990005444

申请日：1990-09-25

Applicant: MICROELECTRONICS AND COMPUTER TECHNOLOGY ...

Inventor： MICROELECTRONICS AND COMPUTER TECHNOLOGY ... ,  LIN, Charles, Wen-Chyang ,  YEE, Ian, Ying, Kit

IPC: B44C01/22

CPC classification number: C23F1/10

Abstract: The field of invention is processes and solutions for etching copper and copper oxides. The technical problem is that existing copper etching techniques are not sufficiently selective of the materials that are etched, and in particular may cause unacceptable damage to a thin protective nickel overcoat. The invention overcomes this problem by providing for copper etching without affecting other metals such as nickel, chromium and titanium. A principle use of the present invention is in the fabrication of microelectronic components such as high density substrates. The present invention copper etchant is best characterized as a nonaqueous solution of dimethyl sulfoxide and a halocarbon compound.