Improved mask for photolithography

    公开(公告)号:AU3478793A

    公开(公告)日:1993-08-03

    申请号:AU3478793

    申请日:1993-01-15

    Abstract: An improvement for reducing proximity effects comprised of additional lines, referred to as intensity leveling bars, into the mask pattern. The leveling bars perform the function of adjusting the edge intensity gradients of isolated edges in the mask pattern, to match the edge intensity gradients of densely packed edges. Leveling bars are placed parallel to isolated edges such that intensity gradient leveling occurs on all isolated edges of the mask pattern. In addition, the leveling bars are designed to have a width significantly less than the resolution of the exposure tool. Therefore, leveling bars that are present in the mask pattern produce resist patterns that completely developed away when a nominal exposure energy is utilized during exposure of photoresist.

    Masks for lithographic patterning using off-axis illumination

    公开(公告)号:AU1746795A

    公开(公告)日:1995-08-29

    申请号:AU1746795

    申请日:1995-02-09

    Abstract: A mask 206 for use in an apparatus utilized for optically transferring a lithographic pattern corresponding to an integrated circuit from said mask 206 onto a semiconductor substrate, said apparatus utilizing off-cases illumination, said pattern including at least one feature, said mask 206 comprising: an additional feature 215, 216 adjacent to and surrounding said at least one feature, said additional feature 215, 216 being disposed at a predetermined distance from all edges of said at least one feature and having the same transparency as said at least one feature, the width of said additional feature 215, 216 being selected such that the depth of focus of said at least one feature is increased.

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