公开(公告)号：MY154799A

公开(公告)日：2015-07-31

申请号：MYPI20080014

申请日：2008-01-04

Applicant: MIMOS BERHAD

Inventor： YUSOFF YUZMAN ,  RAZALI NABIHAH ,  MUSA ROHANA ,  HASHIM MOHAMAD FAIZAL

IPC: H03F1/30

Abstract: AN ADAPTABLE ANALOG READ-OUT INTERFACE CIRCUIT FOR ION-SENSITIVE FIELD EFFECT TRANSISTOR (ISFET) HAS BEEN INVENTED THAT USES A CMOS TEMPERATURE SENSOR (THRESHOLD VOLTAGE EXTRACTION) TO IMPROVE THE THERMAL STABILITY OF THE ISFET. THE IMPROVEMENT IS ACHIEVED BY SUMMATION OF THE POSITIVE TEMPERATURE COEFFICIENT OF THE ISFET AND THE NEGATIVE COEFFICIENT OF THE CMOS TEMPERATURE SENSOR.

公开(公告)号：WO2009070003A3

公开(公告)日：2009-10-15

申请号：PCT/MY2009000014

申请日：2009-01-13

Applicant: MIMOS BERHAD ,  YUSOFF YUZMAN ,  HASHIM MOHAMAD FAIZAL ,  MUSA ROHANA

Inventor： YUSOFF YUZMAN ,  HASHIM MOHAMAD FAIZAL ,  MUSA ROHANA

IPC: G01N27/333 ,  G01F1/64 ,  G01N27/62

CPC classification number: G01N27/4148

Abstract: The present invention relates to an analog read out interface circuit for hydrogen ion sensors, an more particularly for ion-sensitive field transistor pH sensor. An analog read-out interface circuit for ion sensor, comprising a constant voltage constant current circuit; a tunable temperature sensor based on CMOS parasitic bipolar transistor; a summation circuit; characterised in that the analog read-out interface circuit is operable with an option to adjust temperature coefficient (Tc) of the tunable temperature sensor and output voltage level.

Abstract translation: 本发明涉及用于氢离子传感器的模拟读出接口电路，更具体地涉及离子敏感的场效应晶体管pH传感器。 一种用于离子传感器的模拟读出接口电路，包括恒压恒流电路; 基于CMOS寄生双极晶体管的可调温度传感器; 一个求和电路; 其特征在于，所述模拟读出接口电路可操作以具有调整所述可调温度传感器的温度系数（Tc）和输出电压电平的选项。

公开(公告)号：WO2009088280A2

公开(公告)日：2009-07-16

申请号：PCT/MY2009000009

申请日：2009-01-05

Applicant: MIMOS BERHAD ,  HASHIM MOHAMAD FAIZAL ,  YUSOFF YUZMAN ,  KAMAL WAN HASMI ,  MUSA ROHANA ,  RAZALI NABIHAH ,  ABDULLAH ALI ZAINI B

Inventor： HASHIM MOHAMAD FAIZAL ,  YUSOFF YUZMAN ,  KAMAL WAN HASMI ,  MUSA ROHANA ,  RAZALI NABIHAH ,  ABDULLAH ALI ZAINI B

IPC: G01N27/333 ,  G01N27/62

CPC classification number: G01N27/4148

Abstract: An adaptable analog read-out interface circuit for ion-sensitive field effect transistor (ISFET) that uses a tungsten temperature sensor to improve the thermal stability of the ISFET. The improvement is achieved by summation of the positive temperature coefficient of the ISFET and the negative coefficient of the resistor temperature dependence.

Abstract translation: 用于离子敏感场效应晶体管（ISFET）的适应性模拟读出接口电路，其使用钨温度传感器来改善ISFET的热稳定性。 通过ISFET的正温度系数和电阻温度依赖性的负系数的相加来实现改进。

公开(公告)号：WO2009088278A3

公开(公告)日：2009-10-29

申请号：PCT/MY2008000193

申请日：2008-12-23

Applicant: MIMOS BERHAD ,  YUSOFF YUZMAN ,  RAZALI NABIHAH ,  MUSA ROHANA ,  HASHIM MOHAMAD FAIZAL

Inventor： YUSOFF YUZMAN ,  RAZALI NABIHAH ,  MUSA ROHANA ,  HASHIM MOHAMAD FAIZAL

IPC: H03F1/30 ,  H03F3/45

CPC classification number: H03F3/45475 ,  H03F1/301 ,  H03F2200/447 ,  H03F2203/45138

Abstract: An adaptable analog read-out interface circuit for ion-sensitive field effect transistor (ISFET) has been invented that uses a CMOS temperature sensor (threshold voltage extraction) to improve the thermal stability of the ISFET. The improvement is achieved by summation of the positive temperature coefficient of the ISFET and the negative coefficient of the CMOS temperature sensor.

Abstract translation: 发明了一种用于离子敏感场效应晶体管（ISFET）的适应性模拟读出接口电路，其使用CMOS温度传感器（阈值电压提取）来改善ISFET的热稳定性。 通过总和ISFET的正温度系数和CMOS温度传感器的负系数可以实现改进。