公开(公告)号：MY181531A

公开(公告)日：2020-12-25

申请号：MYPI2013700121

申请日：2013-01-18

Applicant: MIMOS BERHAD

Inventor： MOHAMMAD FAIRUZ AMIR ,  MAZLIN MAN ,  MUHAMMAD RAMDZAN BUYONG ,  SHARAIFAH KAMARIAH WAN SABLI ,  AZLINA MOHD ZAIN

Abstract: In fabricating a bond pad in a semiconductor device, the silicon nitride and silicon dioxide layers are separately etched using fluorine-based plasma in a reactive ion etching process chamber. Each layer?s recipe is customized, instead of using the same recipe or parameters for both layers as conventionally practiced, so that the initial undercut structure is prevented from forming and growing into the undesirable trench on the surface of the nitride layer. Next, solvent cleaning process is done after the etching so that the unwanted polymers formed during the etching may be removed. The remaining photoresist is then removed using a microwave oxygen plasma ashing method. The last layer, TiN ARC, is then removed using a chlorine-based plasma in a reactive ion etch process chamber. Finally, the exposed metal bond pad surface is cleaned with a solvent-free cleaning agent to remove the unwanted residues and by-products from the TiN ARC etching to avoid pitting corrosion of the metal surface. Most illustrative drawing: FIGURE 5