公开(公告)号：MY179070A

公开(公告)日：2020-10-27

申请号：MYPI20072179

申请日：2007-12-06

Applicant: MIMOS BERHAD

Inventor： DR MOHD RAIS AHMAD ,  NORA'ZAH ABDUL RASHID ,  ROZINA ABDUL RANI ,  AIMAN SAJIDAH ABD AZIZ

Abstract: The present invention provides a method and system for applying ion-selective membrane on Ion-Sensitive Field Effect Transistor (ISFET) surface without involving a mask step. In one embodiment multi-purpose ISFET devices are first prepared at wafer level using a standard Complementary Metal Oxide Semiconductor (CMOS) fabrication process up to Metal I bond pad and ISFET gate window is open for ion sensing purposes. A retaining structure is applied 105 as a protective layer and to define the gate window opening prior to membrane cocktail application 107 by manually pipetting out through a pipette.