公开(公告)号：SG83687A1

公开(公告)日：2001-10-16

申请号：SG1998003685

申请日：1998-09-17

Applicant: MITSUI CHEMICALS INC

Inventor： TSUYOSHI FUJIMOTO ,  YUMI NAITO ,  ATSUSHI OKUBO ,  YOSHIKAZU YAMADA

IPC: H01L33/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/343 ,  H01J3/18

Abstract: In a self-aligned structure semiconductor laser in which a pair of optical guide layers (23, 28) are respectively formed on both faces of an active layer (25), the optical guide layers having a bandgap which is wider than that of the active layer (25), a pair of cladding layers (22, 29) are formed so as to sandwich the active layer (25) and the optical guide layers (23, 28), the cladding layers having a bandgap which is wider than bandgap of the optical guide layers (23, 28), a pair of carrier blocking layers (24, 26) are respectively formed between the active layer (25) and the optical guide layers (23, 28), the carrier blocking layers having a bandgap which is wider than bandgaps of the active layer (25) and the optical guide layers (23, 28), and a current blocking layer (27) having a stripe-like window is embedded in at least one of the optical guide layers (23, 28), the current blocking layer (27) is formed by selective growth. In this way, a window of a current blocking layer can be accurately formed and the fabrication yield can be improved while avoiding maleffects on other layers.