公开(公告)号：US20030020068A1

公开(公告)日：2003-01-30

申请号：US09911458

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Jeffrey M. Finder

IPC: H01L031/0256

CPC classification number: H01L27/0605 ,  C30B25/18 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8258

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. Compound semiconductor devices or devices comprising metallic oxides are formed using such a structure while at the same time configuring the layers such that the active areas of the devices formed on the foreign substrate are substantially co-planar with those formed within the compound semiconductor or metallic oxide.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 使用这种结构形成包含金属氧化物的复合半导体器件或器件，同时配置这些层，使得形成在异物衬底上的器件的有效面积与化合物半导体或金属氧化物中形成的器件的有效面积大致共平面 。

公开(公告)号：US20040070312A1

公开(公告)日：2004-04-15

申请号：US10267817

申请日：2002-10-10

Applicant: MOTOROLA, INC.

Inventor： David Penunuri ,  Kurt W. Eisenbeiser ,  Jeffrey M. Finder ,  Steven Voight ,  Steven M. Smith ,  Albert Alec Talin

IPC: H03H009/25

CPC classification number: H03H3/08 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L23/522 ,  H01L27/20 ,  H01L2924/0002 ,  H03H9/02566 ,  H03H9/0542 ,  H01L2924/00

Abstract: High quality epitaxial layers of monocrystalline piezoelectric materials and compound semiconductor materials can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (24) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (28) of silicon oxide. An integrated circuit including at least one surface acoustic wave device can be formed in and over the high quality epitaxial layers.

Abstract translation: 单晶压电材料和化合物半导体材料的高质量外延层可通过形成用于生长单晶层的顺应衬底而生长在单晶衬底（22）如大硅晶片上。 容纳缓冲层（24）包括通过氧化硅的非晶界面层（28）与硅晶片隔开的单晶氧化物层。 包括至少一个表面声波装置的集成电路可以形成在高质量外延层中和上方。

公开(公告)号：US20030020114A1

公开(公告)日：2003-01-30

申请号：US09911455

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Zhiyi Yu ,  Ravindranath Droopad ,  Kurt W. Eisenbeiser ,  Jeffrey M. Finder

IPC: H01L027/108

CPC classification number: H01L21/02197 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/31691 ,  H01L21/8258 ,  H01L27/0605 ,  H01L49/003

Abstract: High-density metal-insulator transition field effect transistors are grown on an advanced substrate using buried channel or surface channel designs. With respect to the advanced substrate, high quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.

Abstract translation: 高密度金属 - 绝缘体转换场效应晶体管使用埋入沟道或表面沟道设计在先进的衬底上生长。 对于先进的衬底，通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在单晶衬底例如大硅晶片上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。

公开(公告)号：US20020009612A1

公开(公告)日：2002-01-24

申请号：US09912994

申请日：2001-07-25

Applicant: Motorola, Inc.

Inventor： Ramamoorthy Ramesh ,  Yu Wang ,  Jeffrey M. Finder ,  Zhiyi Yu ,  Ravindranath Droopad ,  Kurt Eisenbeiser

IPC: B32B003/00 ,  B32B007/00 ,  B32B015/00 ,  B32B009/00 ,  B32B019/00

CPC classification number: H01L21/02197 ,  B32B9/00 ,  H01L21/02293 ,  H01L21/31691 ,  H01L28/56 ,  H01L41/0478 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/29 ,  H01L41/319 ,  Y10T428/24917

Abstract: A high quality epitaxial layer of monocrystalline Pb(Mg,Nb)O3nullPbTiO3 or Pb(Mg1-x-Nbx)O3nullPbTiO3 can be grown overlying large silicon wafers by first growing an strontium titanate layer on a silicon wafer. The strontium titanate layer is a monocrystalline layer spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide.

Abstract translation: 首先在硅晶片上生长钛酸锶层，可以将大量的单晶Pb（Mg，Nb）O3-PbTiO3或Pb（Mg1-x-Nbx）O3-PbTiO3）的外延层生长在大的硅晶片上。 钛酸锶层是通过硅氧化物的非晶界面层与硅晶片隔开的单晶层。

公开(公告)号：US20020136931A1

公开(公告)日：2002-09-26

申请号：US09813779

申请日：2001-03-20

Applicant: Motorola, Inc.

Inventor： Kurt W. Eisenbeiser ,  Jeffrey M. Finder

IPC: B32B009/00

CPC classification number: H01L27/20 ,  G02F1/11 ,  G02F1/33 ,  Y10T428/12681

Abstract: High quality epitaxial layers of monocrystalline piezoelectric materials (106) and acousto-optic materials (108) can be grown overlying monocrystalline substrates (102) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (104) on a silicon wafer (102). The accommodating buffer layer (104) is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide (110). The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Acousto-Optic devices (1018) may be formed using the piezoelectric materials (106) and the acousto-optic materials (108) and integrated with devices formed within the substrate (102) or other devices (1016, 1018) formed using other epitaxially grown monocrystalline layers.

Abstract translation: 单晶压电材料（106）和声光材料（108）的高质量外延层可以通过形成用于生长单晶层的柔性衬底而生长在诸如大硅晶片的单晶衬底（102）上。 实现顺应性衬底的形成的一种方法包括首先在硅晶片（102）上生长容纳缓冲层（104）。 容纳缓冲层（104）是通过氧化硅（110）的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 声光器件（1018）可以使用压电材料（106）和声光材料（108）形成，并与形成在衬底（102）内的器件或其他器件（1016,1018）集成，所述器件使用其它外延生长 单晶层。

公开(公告)号：US20020072245A1

公开(公告)日：2002-06-13

申请号：US09733181

申请日：2000-12-08

Applicant: Motorola, Inc.

Inventor： William J. Ooms ,  Jeffrey M. Finder ,  Kurt W. Eisenbeiser ,  Jerald A. Hallmark

IPC: H01L021/31

CPC classification number: H01L37/02 ,  C30B23/02 ,  C30B25/02 ,  C30B25/18 ,  C30B29/32 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02521 ,  H01L27/16

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer (104) on a silicon wafer (102). The accommodating buffer layer (104) is a layer of monocrystalline material spaced apart from the silicon wafer (102) by an amorphous interface layer (108) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Utilizing this technique permits the fabrication of thin film pyroelectric devices (150) on a monocrystalline silicon substrate.

Abstract translation: 通过首先在硅晶片（102）上生长容纳缓冲层（104），可以将高质量的单晶材料外延层生长在大的硅晶片上。 容纳缓冲层（104）是通过氧化硅的非晶界面层（108）与硅晶片（102）间隔开的单晶材料层。 非晶界面层消耗应变并允许高质量单晶容纳缓冲层的生长。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 利用这种技术允许在单晶硅衬底上制造薄膜热释电器件（150）。

公开(公告)号：US20020072140A1

公开(公告)日：2002-06-13

申请号：US09733688

申请日：2000-12-08

Applicant: Motorola, Inc.

Inventor： Jeffrey M. Finder ,  William J. Ooms

IPC: H01L021/00

CPC classification number: H01L31/035245 ,  B82Y20/00 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02521 ,  H01L21/31691 ,  H01L31/0368 ,  H01L31/101 ,  Y02E10/50

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (204) on a silicon wafer (202). The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (206) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. Quantum well infrared photodetectors (200) can be grown on the high quality epitaxial monocrystalline material formed on such compliant substrates to create highly reliable devices having reduced costs.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 实现顺应性衬底的形成的一种方法包括首先在硅晶片（202）上生长容纳缓冲层（204）。 容纳缓冲层是通过氧化硅的非晶界面层（206）与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆单晶层两者晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 量子阱红外光电探测器（200）可以在形成于这种柔性衬底上的高质量外延单晶材料上生长，从而产生具有降低成本的高度可靠的器件。