公开(公告)号：DE3248813T1

公开(公告)日：1983-06-16

申请号：DE3248813

申请日：1982-05-10

Applicant: MOTOROLA INC

Inventor： DARNELL ROBERT D ,  INGLE WILLIAM M

IPC: C01B33/02 ,  C01B33/00 ,  C01B33/035 ,  C01B33/107

Abstract: A process is disclosed for the purification of trichlorosilane and other silicon source materials. Trace impurities of boron and phosphorous are removed from trichlorosilane or dichlorosilane by reacting small amounts of oxygen with the trichlorosilane or dichlorosilane at a temperature between about 60 DEG C. and 300 DEG C. The oxygen reacts with the Si-H bond in HSiCl3 or H2SiCl2 to form a "SiOH" species which in turn complexes impurities such as BCl3 or PCl3 present in the chlorosilane. Purification of the chlorosilane is then easily accomplished during a subsequent distillation step which separates the purified chlorosilane from the less volatile complexed boron or phosphorous compounds.

公开(公告)号：DE3248813A1

公开(公告)日：1983-06-16

申请号：DE3248813

申请日：1982-05-10

Applicant: MOTOROLA INC

Inventor： DARNELL ROBERT D ,  INGLE WILLIAM M

IPC: C01B33/00 ,  C01B33/107

公开(公告)号：DE3248813C2

公开(公告)日：1988-09-22

申请号：DE3248813

申请日：1982-05-10

Applicant: MOTOROLA INC

Inventor： DARNELL ROBERT D ,  INGLE WILLIAM M

IPC: C01B33/02 ,  C01B33/00 ,  C01B33/035 ,  C01B33/107

Abstract: A process is disclosed for the purification of trichlorosilane and other silicon source materials. Trace impurities of boron and phosphorous are removed from trichlorosilane or dichlorosilane by reacting small amounts of oxygen with the trichlorosilane or dichlorosilane at a temperature between about 60 DEG C. and 300 DEG C. The oxygen reacts with the Si-H bond in HSiCl3 or H2SiCl2 to form a "SiOH" species which in turn complexes impurities such as BCl3 or PCl3 present in the chlorosilane. Purification of the chlorosilane is then easily accomplished during a subsequent distillation step which separates the purified chlorosilane from the less volatile complexed boron or phosphorous compounds.

公开(公告)号：DE3332469A1

公开(公告)日：1984-03-29

申请号：DE3332469

申请日：1983-09-08

Applicant: MOTOROLA INC

Inventor： INGLE WILLIAM M ,  DARNELL ROBERT D ,  THOMPSON STEPHEN W

IPC: C01B33/02 ,  B01J8/18 ,  B01J12/02 ,  B01J19/12 ,  C01B33/021 ,  C01B33/03 ,  C23C16/442 ,  B01J8/08 ,  C30B25/00 ,  C30B29/06 ,  C30B29/10 ,  C30B35/00 ,  C23C11/02 ,  C23C11/08

Abstract: An improved means and method for extracting polycrystalline silicon from silicon source gases is provided wherein seed particles and source gases are reacted in a rising particle reaction chamber in which the gas velocity is sufficient to entrain and eject all seed particles smaller than a predetermined size while those which have grown to a larger size fall through the rising gas stream and are extracted from the base of the reactor. Those seed particles which are ejected from the reaction column are separated from the spent gases and fall back into a concentric reservoir. A first gas not containing any silicon is supplied to a nozzle within the reservoir and creates a first gas-particle mixture which is injected into an auxiliary mixing chamber, where it is further mixed with a high velocity lifting gas which includes the source gases. The lifting and source gas-particle mixture is swept through the reactor where silicon deposits on the seed particles. The seed particles recirculate from reaction column to reservoir to reaction column until they have achieved sufficient size so as to be automatically harvested by the differential lifting action in the reaction column.

公开(公告)号：WO1982004434A1

公开(公告)日：1982-12-23

申请号：PCT/US1982000614

申请日：1982-05-10

Applicant: MOTOROLA INC

Inventor： MOTOROLA INC ,  DARNELL ROBERT D ,  INGLE WILLIAM M

IPC: C01B33/08

CPC classification number: C01B33/10794 ,  C01B33/035 ,  Y02P20/582

Abstract: Procede de purification de trichlorosilane et d'autres materiaux de base de silicium. Des impuretes sous forme de traces de bore et de phosphore sont extraites du trichlorosilane (30) en faisant reagir de faibles quantites d'oxygene (42) avec le trichlorosilane a une temperature comprise entre 170 et 300 C. L'oxygene reagit avec la liaison Si-H dans le HSiCl3 pour former une espece 'SiOH' qui complexe a son tour les impuretes telles que le BCl3 ou le PCl3 presentes dans le trichlorosilane. La purification du trichlorosilane est alors accomplie aisement pendant une etape successive de distillation (46) qui separe le trichlorosilane purifie des composes complexes de phosphore ou de bore qui sont moins volatiles.