公开(公告)号：WO1981003086A1

公开(公告)日：1981-10-29

申请号：PCT/US1981000376

申请日：1981-03-16

Applicant: MOTOROLA INC

Inventor： MOTOROLA INC ,  GRAGG J

IPC: H01L29/84

CPC classification number: H01L29/84 ,  G01L9/0054

Abstract: A monolithic silicon pressure sensor (10) employing a terminal resistive element (16) is formed in a thin monocrystalline silicon diaphragm (12). The resistive element is a diffused resistor (18) having current contacts (22, 23) at the ends and two voltage contacts (26, 27) located midway between the current contacts and on opposite sides of a current axis defined between the two current contacts. The thin silicon diaphragm (12) has a square shape and is oriented in a (100) silicon surface with its sides parallel to a (110) crystal orientation. The resistor (18) is oriented with its current axis parallel to a (100) crystalline direction and at 45 degrees with respect to the edge of the diaphragm to maximize sensitivity of the resistor to shear stresses generated by flexure of the diaphragm resulting from pressure differentials across the diaphragm. With a current flowing between current contacts (22, 23), a shear stress acting on the resistor (18) generates a voltage which appears at the voltage contacts (26, 27) and which is proportional to the magnitude of the shear stress.