公开(公告)号：JP2000164718A

公开(公告)日：2000-06-16

申请号：JP32766499

申请日：1999-11-18

Applicant: MOTOROLA INC

Inventor： MIKKOLA ROBERT D ,  CHOWDURY RINA

IPC: H01L21/8239 ,  H01L21/285 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To reduce possibility of forming hollows in a conductive layer by forming a seed film on a substrate, oxidizing a part of the seed film, reducing a part of the seed film, and forming a conductive film on the seed film. SOLUTION: On the upper face of a semiconductor substrate 10, field insulation regions 12 and doped regions 14 are formed, an inter-level insulation(ILD) layer 11 is formed in forming a contact on one of the doped regions 14, a double inlay opening piercing the ILD layer 11 is formed, a barrier film and a Cu seed film are laminated on the ILD film 11 and in the double inlay openings, and are exposed to the air to form an oxide seed film 34 having residual nonoxidative part and an oxidative part, a part of the seed film 34 is reduced to form a restored seed film 74, and an electroplating Cu film 76 is formed thereon to constituted a conductive layer 78.

公开(公告)号：DE69914294T2

公开(公告)日：2004-11-18

申请号：DE69914294

申请日：1999-11-10

Applicant: MOTOROLA INC

Inventor： MIKKOLA ROBERT D ,  CHOWDURY RINA

IPC: H01L21/8239 ,  H01L21/285 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52

Abstract: A process for forming a semiconductor device has been developed that reduces the likelihood of forming voids within conductive layers. A seed film (34) is formed over a substrate, wherein a portion of the seed film (34) is oxidized. The portion of the seed film is reduced to form a recovered seed film (74). A conductive film (76) is formed over the seed film (74). The process is particularly well suited for use in semiconductor devices having openings with high aspect ratios.

公开(公告)号：DE69914294D1

公开(公告)日：2004-02-26

申请号：DE69914294

申请日：1999-11-10

Applicant: MOTOROLA INC

Inventor： MIKKOLA ROBERT D ,  CHOWDURY RINA

IPC: H01L21/8239 ,  H01L21/285 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52

Abstract: A process for forming a semiconductor device has been developed that reduces the likelihood of forming voids within conductive layers. A seed film (34) is formed over a substrate, wherein a portion of the seed film (34) is oxidized. The portion of the seed film is reduced to form a recovered seed film (74). A conductive film (76) is formed over the seed film (74). The process is particularly well suited for use in semiconductor devices having openings with high aspect ratios.