公开(公告)号：JPH1131668A

公开(公告)日：1999-02-02

申请号：JP19107698

申请日：1998-06-22

Applicant: MOTOROLA INC

Inventor： NARESH C SAHA ,  ALLAN JAMES MAGNUS ,  EVANS KEENAN L

IPC: H01L21/28

Abstract: PROBLEM TO BE SOLVED: To suppress the peel-off of a contact to be minimum by forming strong junction against a silicon surface through the use of a nickel-silicide layer in the contact of a semiconductor element. SOLUTION: A metal dope/nickel-silicide layer 12 is formed on the surface 16 of a semiconductor substrate 11. Since the metal dope/nickel-silicide layer 12 is a catalyst for promoting metal-silicon reaction, an adhesive layer is formed and adhesion with respect the surface 16 of the contact 10 is made surely. In the contact 10, a nickel layer 13 is formed on the metal dope/nickel/silicide layer 12, and it is coated with a contact layer 14. A nickel layer 13 is protected, and its oxidation is prevented. Thus, the peel-off of the contact 10 is suppressed to be minimum.