公开(公告)号：JP2000058449A

公开(公告)日：2000-02-25

申请号：JP21311999

申请日：1999-07-28

Applicant: MOTOROLA INC

Inventor： WILLIAM JOSEPH DAUKSHIRE ,  PAWITTER J S MANGATT ,  ROY ALEN HOUSTON

IPC: H01L21/027 ,  G03F1/20 ,  G03F1/16

Abstract: PROBLEM TO BE SOLVED: To enable a mask to be lessened in fraction defective and kept high in structural durability by a method wherein a membrane layer that contains a window above a substrate opening is varied in silicon content in a direction vertical to the substrate, and a patterned scattering layer is contained along the membrane layer and the window. SOLUTION: The main body of a mask 300 is formed of a silicon substrate 202. A membrane layer 204 and a base 200 are of composite structure or sandwich structure, wherein the membrane layer 204 is composed of a first layer 204a of normal composition Si3N4 that comes into contact with the substrate 202, a second layer 204b of silicon-rich silicon nitride, and a third layer 204c of silicon nitride normal in composition. The membrane layer 204 contains a window 209 which spreads over an opening 203 the mask 300 includes an etching stop layer 206 and a patterned scattering layer 208, and furthermore a base layer 200 functions as a masking layer and is patterned for the formation of the opening 203.