公开(公告)号：DK117363B

公开(公告)日：1970-04-20

申请号：DK137664

申请日：1964-03-18

Applicant: MOTOROLA INC

Inventor： ACKERMAN C ,  SULLIVAN D

IPC: H01L29/73 ,  H01L21/00 ,  H01L21/228 ,  H01L21/331 ,  H01L21/48 ,  H01L29/00 ,  H01L11/12

Abstract: 995,527. Semi-conductor devices. MOTOROLA Inc. March 12, 1964 [March 22, 1963], 10546/64. Heading H1K. In a transistor comprising a semi-conductor body of one conductivity type having an alloyed layer of opposite conductivity type on one face and having an emitter region of the first conductivity type alloyed through the layer, the base region of the opposite conductivity type is diffused out of the alloyed emitter region. As shown, Fig. 3, a wafer 30 of P-type germanium has a disc of lead doped with antimony alloyed to its surface to form an N+ type regrown layer 26. Any lead or antimony remaining on the surface is removed by etching the wafer in a mixture of acetic acid and hydrogen peroxide. A collector contact 22 of lead doped with gallium is alloyed to the lower face of the wafer. An emitter ring 23 of lead doped with 0À8% gallium and 1À2% antimony is alloyed to the upper surface of the wafer so that the molten alloyed region extends through the regrown layer 26. The temperature is then reduced to allow a small amount of regrowth and maintained at this level for a sufficient time to allow the antimony, which has a higher diffusion constant than gallium, to diffuse out of the alloyed emitter region to form a thin N-type base region 27 connected to alloyed region 26. During the diffusion gallium and antimony evaporate from the emitter and form a very thin P-type layer and a thicker N-type layer in the exposed surfaces of the wafer. This thin P-type layer is removed using a light chemical etch and circular base contact 24 and annular base contact 25, both of lead doped with antimony, are then alloyed to layer 26. The surface of the base region is masked with wax and the collector is subjected to an electrolytic or chemical etch. The wax is removed and the base region etched lightly to clean the emitter junction. The device is washed in deionized water and encapsulated in the hermetically sealed housing shown in Fig. 1. Contact 22 is joined to the mounting base 13, the conducting strap 15 is joined to emitter contact 23 at two plates, and conducting strap 16 is joined to base contact 25 and has an arch 17 which makes contact with the central base contact 24. The housing is filled with nitrogen before it is sealed. Typical characteristics of the transistor are given.

公开(公告)号：NO116431B

公开(公告)日：1969-03-24

申请号：NO15248364

申请日：1964-03-17

Applicant: MOTOROLA INC

Inventor： ACKERMAN C ,  SULLIVAN D

IPC: H01L29/73 ,  H01L21/00 ,  H01L21/228 ,  H01L21/331 ,  H01L21/48 ,  H01L29/00

Abstract: 995,527. Semi-conductor devices. MOTOROLA Inc. March 12, 1964 [March 22, 1963], 10546/64. Heading H1K. In a transistor comprising a semi-conductor body of one conductivity type having an alloyed layer of opposite conductivity type on one face and having an emitter region of the first conductivity type alloyed through the layer, the base region of the opposite conductivity type is diffused out of the alloyed emitter region. As shown, Fig. 3, a wafer 30 of P-type germanium has a disc of lead doped with antimony alloyed to its surface to form an N+ type regrown layer 26. Any lead or antimony remaining on the surface is removed by etching the wafer in a mixture of acetic acid and hydrogen peroxide. A collector contact 22 of lead doped with gallium is alloyed to the lower face of the wafer. An emitter ring 23 of lead doped with 0À8% gallium and 1À2% antimony is alloyed to the upper surface of the wafer so that the molten alloyed region extends through the regrown layer 26. The temperature is then reduced to allow a small amount of regrowth and maintained at this level for a sufficient time to allow the antimony, which has a higher diffusion constant than gallium, to diffuse out of the alloyed emitter region to form a thin N-type base region 27 connected to alloyed region 26. During the diffusion gallium and antimony evaporate from the emitter and form a very thin P-type layer and a thicker N-type layer in the exposed surfaces of the wafer. This thin P-type layer is removed using a light chemical etch and circular base contact 24 and annular base contact 25, both of lead doped with antimony, are then alloyed to layer 26. The surface of the base region is masked with wax and the collector is subjected to an electrolytic or chemical etch. The wax is removed and the base region etched lightly to clean the emitter junction. The device is washed in deionized water and encapsulated in the hermetically sealed housing shown in Fig. 1. Contact 22 is joined to the mounting base 13, the conducting strap 15 is joined to emitter contact 23 at two plates, and conducting strap 16 is joined to base contact 25 and has an arch 17 which makes contact with the central base contact 24. The housing is filled with nitrogen before it is sealed. Typical characteristics of the transistor are given.

公开(公告)号：WO1982001103A1

公开(公告)日：1982-04-01

申请号：PCT/US1981001009

申请日：1981-07-27

Applicant: MOTOROLA INC

Inventor： MOTOROLA INC ,  SULLIVAN D

IPC: H01L29/72

CPC classification number: H01L29/0804

Abstract: Semiconductor power devices of improved RBSOA and turn-on switching time for use with inductive as well as resistive loads. The emitter (9) of a power transistor has the form of a substantially closed ring of small cross section but great peripheral length, folded into a tortuous configuration so that emitter metallization (12) on the enclosed area can provide low series resistance. In a preferred embodiment the emitter (9) takes the form of the perimeter of a double sided comb with emitter finger regions (23) protruding away from a central spine (8). Improved RBSOA and turn-off times are achieved by the specified emitter geometry and the given width ratios for emitter (10 and 22), base (25 and 26) and metal (24). These ratios permit the device to be scaled to other overall dimensions.

Abstract translation: 具有改进的RBSOA和导通开关时间的半导体功率器件，用于感性和电阻负载。 功率晶体管的发射极（9）具有小截面但具有很大外围长度的基本闭合的环形，折叠成曲折构型，使得封闭区域上的发射极金属化（12）可提供低串联电阻。 在优选实施例中，发射器（9）呈双边梳状物的周边的形式，发射器指状区域（23）从中心脊（8）突出。 通过指定的发射极几何形状和发射器（10和22），基极（25和26）和金属（24）的给定宽度比实现改进的RBSOA和关断时间。 这些比率允许设备缩放到其他总体尺寸。