Abstract:
A processor (216) time-shares correlators (206) to process (402) pilot channels for a plurality of branches to derive pilot symbols for each of the plurality of branches before processing control and data channels. The processor and the correlators cooperate to determine (404) from the pilot symbols a timing estimate for each of the plurality of branches. A signal quality estimator (210) determines (406) from the pilot symbols a signal quality for each of the plurality of branches. Subsequently, the processor cooperates with the correlators to process (408) the control and data channels of the plurality of branches, in an order determined by a plurality of branch attributes including at least one of the signal quality and the timing estimate determined for each of the plurality of branches.
Abstract:
A composite semiconductor (FIG. 43) (300) structure includes islands (302) of compound semiconductor materials formed on a noncompound substrate (303), and an optical testing structure. In one embodiment, a scan chain (301) runs through the noncompound substrate (303) (and possibly also through the islands (302)) and terminates in the islands at optical interface elements (304), one of which is an optical emitter and the other of which is an optical detector. A test device (FIG. 44) (400) inputs test signals to, and reads test signals from, the scan chain by interfacing (401) optically with the optical interface elements. In another embodiment (FIG. 46), an optical detector (604) is formed in the silicon substrate (52) and an optical emitter (605) is formed in the compound semiconductor material (66). A leaky waveguide (606) communicating with the emitter (605) overlies the detector (604), and detection by the detector of light (610) emitted by the emitter (605) is an indication of the absence of an intended circuit element between the detector (604) and the leaky side of the waveguide (606).
Abstract:
A composite semiconductor (FIG. 43) (300) structure includes islands (302) of compound semiconductor materials formed on a noncompound substrate (303), and an optical testing structure. In one embodiment, a scan chain (301) runs through the noncompound substrate (303) (and possibly also through the islands (302)) and terminates in the islands at optical interface elements (304), one of which is an optical emitter and the other of which is an optical detector. A test device (FIG. 44) (400) inputs test signals to, and reads test signals from, the scan chain by interfacing (401) optically with the optical interface elements. In another embodiment (FIG. 46), an optical detector (604) is formed in the silicon substrate (52) and an optical emitter (605) is formed in the compound semiconductor material (66). A leaky waveguide (606) communicating with the emitter (605) overlies the detector (604), and detection by the detector of light (610) emitted by the emitter (605) is an indication of the absence of an intended circuit element between the detector (604) and the leaky side of the waveguide (606).
Abstract:
A battery-powered selective call transceiver (20), operating in two-way communication with an RF communication system (10), can be put in a power saving state. A user control (62) on the transceiver (20) allows a user to select the duration of a power saving interval. The transceiver (20) sends to the communication system (10) a signal requesting that the transceiver enter a power saving state for the selected interval. Upon receipt of an acknowledgment signal from the system, the transceiver enters the power saving state.
Abstract:
High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers (26). The compliant substrate comprises an accommodating buffer layer (24) that is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer (28) permits the growth of a high quality monocrystalline oxide accommodating buffer layer (24). The accommodating buffer layer (24) is lattice matched to both the underlying silicon wafer (22) and the overlying monocrystalline material layer (26). The fabrication of on chip high frequency communications devices (100) such as direct conversion and sampling circuits with direct interface to high speed compound semiconductor material (26) in integrated circuits for high speed data acquisition and antenna interface is disclosed for direct coupling of RF signals in single chip applications.
Abstract:
A battery-powered selective call transceiver, operating in two-way communication with an RF communication system, can be put in a power saving state. A user control on the transceiver allows a user to select the duration of a power saving interval. The transceiver sends to the communication system a signal requesting that the transceiver enter a power saving state for the selected interval. Upon receipt of an acknowledgment signal from the system, the transceiver enters the power saving state.
Abstract:
A battery-powered selective call transceiver, operating in two-way communication with an RF communication system, can be put in a power saving state. A user control on the transceiver allows a user to select the duration of a power saving interval. The transceiver sends to the communication system a signal requesting that the transceiver enter a power saving state for the selected interval. Upon receipt of an acknowledgment signal from the system, the transceiver enters the power saving state.