EUV collector system with enhanced EUV radiation collection
    1.
    发明授权
    EUV collector system with enhanced EUV radiation collection 有权
    具有增强的EUV辐射收集的EUV收集器系统

    公开(公告)号:US08873025B2

    公开(公告)日:2014-10-28

    申请号:US14056654

    申请日:2013-10-17

    Abstract: A collector system for extreme ultraviolet (EUV) radiation includes a collector mirror and a radiation-collection enhancement device (RCED) arranged adjacent an aperture member of an illuminator. The collector mirror directs EUV radiation from an EUV radiation source towards the aperture member. The RCED redirects a portion of the EUV radiation that would not otherwise pass through the aperture of the aperture member or that would not have an optimum angular distribution, to pass through the aperture and to have an improved angular distribution better suited to input specifications of an illuminator. This provides the illuminator with greater amount of useable EUV radiation than would otherwise be available from the collector mirror alone, thereby enhancing the performing of an EUV lithography system that uses such a collector system with a RCED.

    Abstract translation: 用于极紫外(EUV)辐射的收集器系统包括与照明器的孔径构件相邻布置的收集器反射镜和辐射收集增强装置(RCED)。 收集器镜将EUV辐射源的EUV辐射引导到孔径构件。 RCED将EUV辐射的一部分重新定向,否则它们将不会通过孔径构件的孔径,或者不具有最佳的角度分布,以穿过该孔,并具有更好地适合于输入规格的角分布 照明器 这为照明器提供了比单独从收集器镜可能获得的更大量的可用的EUV辐射,从而增强了使用具有RCED的这种收集器系统的EUV光刻系统的执行。

    EUV collector system with enhanced EUV radiation collection

    公开(公告)号:US20140043595A1

    公开(公告)日:2014-02-13

    申请号:US14056654

    申请日:2013-10-17

    Abstract: A collector system for extreme ultraviolet (EUV) radiation includes a collector mirror and a radiation-collection enhancement device (RCED) arranged adjacent an aperture member of an illuminator. The collector mirror directs EUV radiation from an EUV radiation source towards the aperture member. The RCED redirects a portion of the EUV radiation that would not otherwise pass through the aperture of the aperture member or that would not have an optimum angular distribution, to pass through the aperture and to have an improved angular distribution better suited to input specifications of an illuminator. This provides the illuminator with greater amount of useable EUV radiation than would otherwise be available from the collector mirror alone, thereby enhancing the performing of an EUV lithography system that uses such a collector system with a RCED.

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