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    VARIABLE CAPACITORS, COMPOSITE MATERIALS
    1.
    发明申请
    VARIABLE CAPACITORS, COMPOSITE MATERIALS 审中-公开
    可变电容器，复合材料

    公开(公告)号：WO2003088358A1

    公开(公告)日：2003-10-23

    申请号：PCT/US2002/011133

    申请日：2002-04-09

    Applicant: MICROCOATING TECHNOLOGIES, INC. ,  HUNT, Andrew, Tye ,  FAGUY, Peter, W. ,  OLJACA, Miodrag ,  FLANAGAN, Scott ,  DESHPANDE, Girish ,  LEE, Stein

    Inventor： HUNT, Andrew, Tye ,  FAGUY, Peter, W. ,  OLJACA, Miodrag ,  FLANAGAN, Scott ,  DESHPANDE, Girish ,  LEE, Stein

    IPC: H01L27/14

    CPC classification number: H01G7/06

    Abstract: Tunable capacitors (10, 20, 30, 40) have a dielectric material (16, 26, 36, 42) between electrodes, which dielectric material comprises an insulating material (17, 27, 37, 42) and electrically conductive material, (18, 28, 38, 48) e.g., conductive nanoparticulates, dispersed therein. In certain cases, enhanced tune-ability is achieved when the dielectric material comprises elongated nanoparticulates (38). Further enhanced tune-ability may be achieved by aligning elongated particulates in an electrode-to-electrode direction. Nanoparticulates may be produced by heating passivated nanoparticulates. Passivated nanoparticulates may be covalently bound within a polymeric matrix. High bias potential device structures can be formed with preferential mobilities.

    Abstract translation: 可调电容器（10,20,30,40）在电极之间具有介电材料（16,26,36,42），该电介质材料包括绝缘材料（17,27,37,42）和导电材料（18 ，28,38,48），例如，分散在其中的导电纳米颗粒。 在某些情况下，当介电材料包括细长的纳米颗粒（38）时，可实现增强的调谐能力。 可以通过使电极对电极方向上的细长颗粒对准来实现进一步增强的调谐能力。 纳米微粒可以通过加热钝化的纳米颗粒来生产。 钝化的纳米颗粒可以共价结合在聚合物基质内。 可以以优先的迁移率形成高偏置电位器件结构。

    EPITAXIAL THIN FILMS
    2.
    发明公开
    EPITAXIAL THIN FILMS 审中-公开
    外延片

    公开(公告)号：EP1145252A2

    公开(公告)日：2001-10-17

    申请号：EP00921311.7

    申请日：2000-01-12

    Applicant: MicroCoating Technologies, Inc.

    Inventor： HUNT, Andrew, T. ,  DESHPANDE, Girish ,  COUSINS, Donald ,  HWANG, Tzyy-Jiuan, Jan ,  LIN, Wen-Yi ,  SHOUP, Shara, S.

    IPC: H01B1/00

    CPC classification number: H01L39/2461

    Abstract: Epitaxial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal grain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

    REDUCED GRAIN BOUNDARY CRYSTALLINE THIN FILMS
    4.
    发明公开
    REDUCED GRAIN BOUNDARY CRYSTALLINE THIN FILMS 审中-公开
    具有降低的谷物边界晶体薄膜

    公开(公告)号：EP1307340A1

    公开(公告)日：2003-05-07

    申请号：EP01958938.1

    申请日：2001-07-13

    Applicant: MicroCoating Technologies, Inc.

    Inventor： HUNT, Andrew, Tye ,  DESHPANDE, Girish ,  HWANG, Tzyy-Jiuan Jan ,  JIANG, Yongdong ,  FAGUY, Peter

    IPC: B32B15/04 ,  B32B9/00

    CPC classification number: H01M8/1246 ,  C23C16/0254 ,  C23C16/0272 ,  C23C16/40 ,  C23C16/453 ,  H01M4/9033 ,  H01M8/1253 ,  Y02E60/525 ,  Y02P70/56

    Abstract: Reduced grain boundary (RGB) thin films for use as electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic, photonic, radio frequency and pyroelectric devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, RGB films having pore-free, ideal grain boundaries, and dense structure can be formed. In addition, the use of RGB thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal grain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed of high-quality, dense, gas-tight, thin film layers of mixed-conducting oxides on porous ceramic substrates. RGB thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The RGB thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of electronic, photonic, etc. devices that can have their properties adjusted by applying a DC bias between their electrodes.

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