Masks for lithographic patterning using off-axis illumination
    1.
    发明公开
    Masks for lithographic patterning using off-axis illumination 失效
    Masken zur Herstellung平版印刷机Muster unter Verwendung schiefer Beleuchtung

    公开(公告)号:EP1102125A1

    公开(公告)日:2001-05-23

    申请号:EP01101842.1

    申请日:1995-02-09

    CPC classification number: G03F1/36 G03F7/70125 G03F7/70433

    Abstract: A mask 206 for use in an apparatus utilized for optically transferring a lithographic pattern corresponding to an integrated circuit from said mask 206 onto a semiconductor substrate, said apparatus utilizing off-cases illumination, said pattern including at least one feature, said mask 206 comprising: an additional feature 215, 216 adjacent to and surrounding said at least one feature, said additional feature 215, 216 being disposed at a predetermined distance from all edges of said at least one feature and having the same transparency as said at least one feature, the width of said additional feature 215, 216 being selected such that the depth of focus of said at least one feature is increased.

    Abstract translation: 用于用于将对应于集成电路的光刻图案从所述掩模206光学转移到半导体衬底上的设备的掩模206,所述设备利用外壳照明,所述图案包括至少一个特征,所述掩模206包括: 邻近并围绕所述至少一个特征的附加特征215,216,所述附加特征215,216设置在距所述至少一个特征的所有边缘预定距离处并且具有与所述至少一个特征相同的透明度, 选择所述附加特征215,216的宽度,使得所述至少一个特征的焦深增加。

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