公开(公告)号：US20240248616A1

公开(公告)日：2024-07-25

申请号：US18624657

申请日：2024-04-02

Applicant: Micron Technology, Inc.

Inventor： Sandeep Reddy Kadasani ,  Pitamber Shukla ,  Scott Anthony Stoller ,  Niccolo' Righetti

IPC: G06F3/06

CPC classification number: G06F3/0619 ,  G06F3/064 ,  G06F3/0653 ,  G06F3/0688

Abstract: A set of threshold voltage distribution width measurements are obtained for a block in a memory device. An endurance estimate is determined for the block based on the threshold voltage distribution width measurements. The endurance estimate comprises an indication of an estimated number of program/erase cycles during which data can be reliably stored by the block. One or more parameters of the block are managed based on the endurance estimate.

公开(公告)号：US11693587B2

公开(公告)日：2023-07-04

申请号：US17404875

申请日：2021-08-17

Applicant: Micron Technology, Inc.

Inventor： Sandeep Reddy Kadasani ,  Scott Anthony Stoller ,  Pitamber Shukla ,  Niccolo' Righetti ,  Chi Ming Chu

IPC: G06F3/06

CPC classification number: G06F3/0655 ,  G06F3/0604 ,  G06F3/0679

Abstract: A read operation is performed on a memory device in accordance with a pass-through voltage setting that defines a pass-through voltage applied to one or more cells of the memory device during read operations. A number of zero bits read from the memory device based on the read operation are counted and compared with a threshold value. Based on the number of zero bits exceeding the threshold value, the pass-through voltage is increased by adjusting the pass-through voltage setting.

公开(公告)号：US11972114B2

公开(公告)日：2024-04-30

申请号：US17867204

申请日：2022-07-18

Applicant: Micron Technology, Inc.

Inventor： Sandeep Reddy Kadasani ,  Pitamber Shukla ,  Scott Anthony Stoller ,  Niccolo' Righetti

IPC: G06F3/06

CPC classification number: G06F3/0619 ,  G06F3/064 ,  G06F3/0653 ,  G06F3/0688

Abstract: A set of threshold voltage distribution width measurements are obtained for a block in a memory device. An endurance estimate is determined for the block based on the threshold voltage distribution width measurements. The endurance estimate comprises an indication of an estimated number of program/erase cycles during which data can be reliably stored by the block. One or more parameters of the block are managed based on the endurance estimate.

公开(公告)号：US20240020020A1

公开(公告)日：2024-01-18

申请号：US17867204

申请日：2022-07-18

Applicant: Micron Technology, Inc.

Inventor： Sandeep Reddy Kadasani ,  Pitamber Shukla ,  Scott Anthony Stoller ,  Niccolo' Righetti

IPC: G06F3/06

CPC classification number: G06F3/0619 ,  G06F3/0688 ,  G06F3/0653 ,  G06F3/064

Abstract: A set of threshold voltage distribution width measurements are obtained for a block in a memory device. An endurance estimate is determined for the block based on the threshold voltage distribution width measurements. The endurance estimate comprises an indication of an estimated number of program/erase cycles during which data can be reliably stored by the block. One or more parameters of the block are managed based on the endurance estimate.

公开(公告)号：US20230058645A1

公开(公告)日：2023-02-23

申请号：US17404875

申请日：2021-08-17

Applicant: Micron Technology, Inc.

Inventor： Sandeep Reddy Kadasani ,  Scott Anthony Stoller ,  Pitamber Shukla ,  Niccolo' Righetti ,  Chi Ming Chu

IPC: G06F3/06

Abstract: A read operation is performed on a memory device in accordance with a pass-through voltage setting that defines a pass-through voltage applied to one or more cells of the memory device during read operations. A number of zero bits read from the memory device based on the read operation are counted and compared with a threshold value. Based on the number of zero bits exceeding the threshold value, the pass-through voltage is increased by adjusting the pass-through voltage setting.