公开(公告)号：JP2004011899A

公开(公告)日：2004-01-15

申请号：JP2002170641

申请日：2002-06-11

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： NAKATANI ISAO

IPC: F01D11/02 ,  F16J15/43

Abstract: PROBLEM TO BE SOLVED: To provide a magnetic fluid sealed rotary shaft mechanism restricted in a rotating resistance during the rotation and restricted in the torque when starting the rotation. SOLUTION: Single annular projection 3 or a plurality of annular projections 3 arranged in the axial direction of a rotary shaft are provided from the peripheral surface of the rotary shaft 1 formed from a magnetic body toward the inner peripheral surface of a bearing 2, and a magnetic field concentrates between the projections and the inner peripheral surface of the bearing to magnetically hold the magnetic fluid 4 in a clearance formed in this part. In this magnetic fluid sealed rotary shaft mechanism, outline of a cross section of the projection is formed into a part of an ellipse or a curve similar to an ellipse. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2001268957A

公开(公告)日：2001-09-28

申请号：JP2000073091

申请日：2000-03-15

Applicant: JAPAN SCIENCE & TECH CORP ,  NAT INST FOR MATERIALS SCIENCE

Inventor： NAKATANI ISAO

IPC: H02N11/00 ,  H02N1/00 ,  H02N1/08

Abstract: PROBLEM TO BE SOLVED: To realize a micro motor of simple structure with less loss. SOLUTION: A body of rotation wherein the number of electrons injected on one rotating face is equal to the number of electrons pulled out on the other rotating face and the degree of spin polarization on the one rotating face is different from the degree of spin polarization on the other rotating face is used as a rotor.

公开(公告)号：JP2002038285A

公开(公告)日：2002-02-06

申请号：JP2000224248

申请日：2000-07-25

Applicant: NAT INST FOR MATERIALS SCIENCE ,  JAPAN SCIENCE & TECH CORP ,  ANELVA CORP

Inventor： NAKATANI ISAO ,  MASHITA KIMIKO ,  MATSUI NAOKO

IPC: C23F4/00 ,  G11B5/31 ,  G11B5/39 ,  H01F41/30 ,  H01L21/033 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213

Abstract: PROBLEM TO BE SOLVED: To provide a mask material for dry etching, which is suitable for fine patterning of thin magnetic films of about several nanometers such as NiFe and CoFe composing a TMR film, and furthermore, which can simplify a manufacturing process of a TMR element and reduce a manufacturing cost concerned with facilities and materials SOLUTION: The mask material used in dry etching magnetic materials with mixed gas of carbon monoxide and a compound including nitrogen is characterized in consisting of a metal (either of tantalum, tungsten, zirconium, or hafnium) of which the melting point or the boiling point rises when the material changes into a nitride or a carbide.