公开(公告)号：JP2003099920A

公开(公告)日：2003-04-04

申请号：JP2001288171

申请日：2001-09-21

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： TAKAHASHI YUKIKO ,  ONUMA MASATO ,  HOUNO KAZUHIRO

IPC: C23C14/14 ,  C23C14/34 ,  G11B5/65 ,  G11B5/73 ,  G11B5/738 ,  G11B5/851 ,  H01F10/14 ,  H01F41/18

Abstract: PROBLEM TO BE SOLVED: To obtain an PePt phase of L10 structure regularized immediately after the film is formed without high temperature treatment at a temperature of 600 deg.C or higher after the film is formed and without adding a third element to obtain large coercive force at a low temperature. SOLUTION: The FePt phase of L10 structure regularized right after forming the film is obtained by forming the film by a sputtering method while heating a substrate at a temperature of 200-300 deg.C, and making the regularization advance for the FePt phase by the surface dispersion of atoms occurring on the surface during the film formation.