公开(公告)号：JP2003253445A

公开(公告)日：2003-09-10

申请号：JP2002057748

申请日：2002-03-04

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： SAKAGUCHI ISAO ,  HANEDA HAJIME ,  HISHIDA SHUNICHI ,  ADACHI YUTAKA ,  OHASHI NAOKI ,  MOROMI HARUKI

IPC: C01G9/03 ,  C23C16/40

Abstract: PROBLEM TO BE SOLVED: To lower the temperature at vapor deposition method of a zinc oxide thin film and to improve the orientation of the zinc oxide thin film. SOLUTION: The highly oriented zinc oxide thin film is synthesized at a low pressure and a low temperature by either of a first synthetic method and a second synthetic method. The first method for vapor depositing the zinc oxide thin film under a low pressure of ≤10 -2 Torr comprises primarily synthesizing zinc oxide at a substrate temperature of 500 to 700°C so that the zinc oxide covers the substrate surface partially, and thereafter, secondarily synthesizing the zinc oxide thin film at a substrate temperature of ≤400°C by using oriented zinc oxide as nuclei. The second method for synthesizing the zinc oxide thin film under a low pressure of ≤10 -2 Torr comprises primarily synthesizing oriented zinc oxide particles at a substrate temperature of ≤400°C by increasing the density of radicals with which the substrate is irradiated by shortening the distance between the oxygen radicals and the substrate and thereafter, secondarily synthesizing the zinc oxide thin film at a substrate temperature of ≤400°C by using oriented zinc oxide particles as nuclei in a state in which the distance between the source of oxygen radicals and the substrate is expanded, in which the density of the oxygen radicals at the primary synthesis is at least three times of that at the secondary synthesis. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2003236376A

公开(公告)日：2003-08-26

申请号：JP2002044216

申请日：2002-02-21

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： SAKAGUCHI ISAO ,  RI SUSUMU ,  HANEDA HAJIME ,  HISHIDA SHUNICHI ,  OHASHI NAOKI

IPC: B01J23/06 ,  B01J35/02 ,  B01J37/02 ,  C23C16/40 ,  C23C16/56

Abstract: PROBLEM TO BE SOLVED: To provide a method for enhancing the photocatalytic activity of a zinc oxide photocatalyst thin film used for environmental purification and the like. SOLUTION: A highly-oriented zinc oxide thin film which is film-deposited on the surface of a base body and whose C-axis is perpendicular to a base plate is subjected to nitrogen radical treatment at 50 to 400°C temperature of the base body to enhance the photocatalytic activity of zinc oxide. For example, the highly-oriented zinc oxide thin film whose C-axis is perpendicular to the base plate is film-deposited on the surface of the base body by an MOCVD method and zinc oxide is irradiated with nitrogen radical using a radical source mounted on an MOCVD device. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2002166169A

公开(公告)日：2002-06-11

申请号：JP2000366503

申请日：2000-12-01

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： KONO KINUYO ,  KAMEI MASAYUKI ,  HANEDA HAJIME ,  SAKAGUCHI ISAO

IPC: C01G9/02 ,  B01J23/06 ,  B01J35/02

Abstract: PROBLEM TO BE SOLVED: To provide a zinc oxide photocatalyst which effectively restricts the photodissolution of zinc oxide, which still shows photocatalytic activity usable for decomposing and removing environmentally harmful substances or the like and which retains the transparency and UVA adsorbing property of zinc oxide itself. SOLUTION: The surface of zinc oxide is covered with titanium oxide (without reference to rutile-type, anatase-type or amorphous-type) of 1-100 nm in thickness.

公开(公告)号：EP2555308A4

公开(公告)日：2014-07-30

申请号：EP11765400

申请日：2011-03-23

Applicant: NAT INST FOR MATERIALS SCIENCE ,  TOYOTA MOTOR CO LTD

Inventor： TAKADA KAZUNORI ,  XU XIAOXIONG ,  OHNISHI TSUYOSHI ,  SAKAGUCHI ISAO ,  WATANABE KEN ,  TSUCHIDA YASUSHI ,  UENO YUKIYOSHI ,  KAWAMOTO KOJI

IPC: H01M10/0562 ,  H01M4/131 ,  H01M4/36 ,  H01M4/525 ,  H01M10/052

CPC classification number: H01M10/0562 ,  H01M4/131 ,  H01M4/362 ,  H01M4/366 ,  H01M4/525 ,  H01M10/052 ,  H01M2004/028

Abstract: An Object of the invention is to obtain an all solid lithium battery having an excellent output performance. To achieve the object, a sulfide based solid electrolyte is used as an electrolyte; an oxide containing lithium, a metal element that acts as a redox couple, and a metal element that forms an electron-insulating oxide is used as a cathode active material; and the concentration of the metal element that forms the electron-insulating oxide on the surface of the cathode active material (oxide) that is in contact with the sulfide solid electrolyte is made high.

公开(公告)号：EP2267193A4

公开(公告)日：2014-06-25

申请号：EP09726041

申请日：2009-03-18

Applicant: MITSUBISHI GAS CHEMICAL CO ,  NAT INST FOR MATERIALS SCIENCE

Inventor： SEKIWA HIDEYUKI ,  KOBAYASHI JUN ,  MIYAMOTO MIYUKI ,  OHASHI NAOKI ,  SAKAGUCHI ISAO ,  WADA YOSHIKI

IPC: C30B29/16 ,  C30B9/08 ,  C30B19/02 ,  C30B33/00 ,  H01L21/02 ,  H01L21/368

CPC classification number: H01L21/02625 ,  C30B9/08 ,  C30B19/02 ,  C30B29/16 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02628

公开(公告)号：EP2135978A4

公开(公告)日：2010-11-17

申请号：EP08722549

申请日：2008-03-14

Applicant: MITSUBISHI GAS CHEMICAL CO ,  NAT INST FOR MATERIALS SCIENCE

Inventor： SEKIWA HIDEYUKI ,  KOBAYASHI JUN ,  OHASHI NAOKI ,  SAKAGUCHI ISAO

IPC: C30B29/22 ,  C30B19/02 ,  H01L21/368 ,  H01L33/00 ,  H01L33/28

CPC classification number: C30B29/16 ,  C30B19/02 ,  H01L21/02403 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02625 ,  H01L21/02628 ,  H01L33/285 ,  Y10T428/26

公开(公告)号：EP1662576A4

公开(公告)日：2007-11-28

申请号：EP04771845

申请日：2004-08-19

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： OHASHI NAOKI ,  HANEDA HAJIME ,  RYOKEN HARUKI ,  SAKAGUCHI ISAO ,  ADACHI YUTAKA ,  TAKENAKA TADASHI

IPC: H01L29/227 ,  H01L21/338 ,  H01L29/225 ,  H01L29/778 ,  H01L29/812

CPC classification number: H01L29/7787 ,  H01L29/225

Abstract: [PROBLEMS] When zinc oxide semiconductor is used for an electric element, it is effective particularly to cause charge separation by comprising zinc oxide crystals of different states. [MEANS FOR SOLVING PROBLEMS] A zinc oxide-based multilayer structural body composed of a zinc oxide layer having a lattice volume Va and a donor concentration Na or a zinc oxide sold solution layer and a zinc oxide layer having a lattice volume Vb and a donor concentration Nb or a zinc oxide solid solution layer. The lattice volumes Va and Vb satisfy the relation Va Nb. The zinc oxide layer having the lattice volume Va serves as a charge supply layer, and the zinc oxide layer having the lattice volume Vb serves as a charge acceptive layer. The zinc oxide-based multilayer structural body is characterized in that even while no electric field is applied from outside to the multilayer structural body, a state that charges move from the layer serving as the charge supply layer into the layer serving as the charge acceptive layer is established, and a depletion layer is formed in the charge supply layer because of this charge movement.

公开(公告)号：EP1630218A4

公开(公告)日：2009-04-29

申请号：EP04730742

申请日：2004-04-30

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： OHASHI NAOKI ,  ISHIGAKI TAKAMASA ,  TAGUCHI HIROYUKI ,  SAKAGUCHI ISAO ,  HANEDA HAJIME ,  SEKIGUCHI TAKASHI

IPC: C09K11/54 ,  C09K11/08 ,  C09K11/62 ,  H01J63/04

CPC classification number: C09K11/623 ,  Y10T428/2991

Abstract: A zinc oxide phosphor characterized by emitting visible radiation with a broad emission spectrum close to white; and a process for producing the same. The process is characterized in that the luminous efficiency of zinc oxide phosphor is enhanced by subjecting powder obtained by mixing multiple additives with zinc oxide and effecting heat treatment of the mixture further to hydrogenation. The zinc oxide phosphor capable of broad luminescence covering a wide wavelength range over substantially all the region of visible radiation can find application in a white diode, a white vacuum fluorescent character display tube or a fluorescent paint.

公开(公告)号：EP1179621A4

公开(公告)日：2007-12-19

申请号：EP00911381

申请日：2000-03-27

Applicant: JAPAN SCIENCE & TECH AGENCY ,  NAT INST FOR MATERIALS SCIENCE ,  YASU EIJI ,  GAMO MIKA ,  SAKAGUCHI ISAO

Inventor： ANDO TOSHIHIRO ,  SATO YOICHIRO ,  YASU EIFI ,  GAMO MIKA ,  SAKAGUCHI ISAO

IPC: C30B25/10 ,  C30B29/04

CPC classification number: C30B25/105 ,  C30B29/04 ,  Y10S117/902

Abstract: A substrate is polished and made an inclined substrate, which is exposed to a hydrogen plasma and is thereby smoothened. The substrate is then heated controlledly until it surface temperature reaches 830 DEG C. Meanwhile, a gas mixture of 1% methane, 50 ppm hydrogen sulfide and hydrogen is introduced in a tubular reaction vessel to flow therethrough at 200 ml/min, where microwave plasma is excited to cause n-type semiconductor diamond to epitaxially grow on the substrate. An ion doped n-type semiconductor is thus formed that has a single donor level of an activation energy at 0.38 eV and is high in mobility and of high quality.