公开(公告)号：EP3176843A4

公开(公告)日：2018-03-21

申请号：EP15827179

申请日：2015-07-28

Applicant: NAT INSTITUTE FOR MATERIALS SCIENCE

Inventor： FURUBAYASHI TAKAO ,  TAKAHASHI YUKIKO ,  HONO KAZUHIRO ,  DU YE

IPC: H01L43/08 ,  G11B5/39 ,  H01L43/10

CPC classification number: G11B5/3906 ,  G11B5/1278 ,  G11B5/39 ,  G11B5/40 ,  G11B2005/3996 ,  H01L43/08 ,  H01L43/10

Abstract: The present invention addresses the problem of providing an element which uses the current-perpendicular-to-plane giant magnetoresistance (CPPGMR) effect of a thin film having the three-layer structure of ferromagnetic metal/non-magnetic metal/ferromagnetic metal. The problem is solved by a magnetoresistive element provided with a lower ferromagnetic layer and an upper ferromagnetic layer which contain a Heusler alloy, and a spacer layer sandwiched between the lower ferromagnetic layer and the upper ferromagnetic layer, the magnetoresistive element being characterized in that the spacer layer contains an alloy having a bcc structure. Furthermore, it is preferable for the alloy to have a disordered bcc structure.