公开(公告)号：WO1981001485A1

公开(公告)日：1981-05-28

申请号：PCT/US1980001523

申请日：1980-11-12

Applicant: NCR CORP

Inventor： NCR CORP ,  DALTON P ,  BERGSTEDT L

IPC: H01L27/02

CPC classification number: H01L21/28273 ,  H01L21/823456 ,  H01L21/823462 ,  H01L29/7838

Abstract: A pair of narrow channel IGFET devices (10A, 10B) having separate insulated gate electrode structures (19A, 19B) formed over narrow channel regions (28A, 28B) of a substrate (11) flanking a central enhancement region (27). Methods of forming the narrow channel regions using a single photolithography step and forming separate gate electrode structures overlying each using alternative processes, each generally involving two photolithography steps, are set forth.

Abstract translation: 一对窄通道IGFET器件（10A，10B）具有分开的绝缘栅电极结构（19A，19B），形成在中心增强区域（27）侧面的衬底（11）的窄通道区域（28A，28B）上。 使用单个光刻步骤形成窄通道区域的方法，并且使用各自通常涉及两个光刻步骤的替代工艺形成分别覆盖每个的栅电极结构。