公开(公告)号：WO1982004162A1

公开(公告)日：1982-11-25

申请号：PCT/US1982000600

申请日：1982-05-07

Applicant: NCR CORP

Inventor： NCR CORP ,  TOPICH JAMES ANTHONY

IPC: H01L29/78

CPC classification number: H01L29/792

Abstract: An alterable threshold memory device (100) includes a semiconductor substrate (11), a memory silicon oxide layer (12) having a thickness lying in the range of 25-40 Angstroms, a silicon nitride layer (13), an interfacial silicon oxide layer (14) having a thickness lying in the range of 30-60 Angstroms, and a polysilicon gate electrode. The device (100) has a high write speed and a large memory window. The nitride layer (13) may have a thickness lying in the range 150-250 Angstroms, enabling the utilization of low write voltages.

Abstract translation: 可变阈值存储器件（100）包括半导体衬底（11），具有在25-40埃范围内的厚度的存储氧化硅层（12），氮化硅层（13），界面氧化硅层 （14），其厚度在30-60埃的范围内，以及多晶硅栅电极。 设备（100）具有高写入速度和大的存储器窗口。 氮化物层（13）可以具有在150-250埃范围内的厚度，从而能够利用低写入电压。

公开(公告)号：EP0078318A4

公开(公告)日：1983-06-24

申请号：EP82901890

申请日：1982-05-07

Applicant: NCR CORP

Inventor： TOPICH JAMES ANTHONY

IPC: H01L21/8247 ,  H01L21/8246 ,  H01L27/112 ,  H01L29/788 ,  H01L29/792 ,  H01L29/78

CPC classification number: H01L29/792

Abstract: An alterable threshold memory device (100) includes a semiconductor substrate (11), a memory silicon oxide layer (12) having a thickness lying in the range of 25-40 Angstroms, a silicon nitride layer (13), an interfacial silicon oxide layer (14) having a thickness lying in the range of 30-60 Angstroms, and a polysilicon gate electrode. The device (100) has a high write speed and a large memory window. The nitride layer (13) may have a thickness lying in the range 150-250 Angstroms, enabling the utilization of low write voltages.