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    CVD REACTOR FOR MANUFACTURING SYNTHETIC FILMS AND METHODS OF FABRICATION
    1.
    发明申请
    CVD REACTOR FOR MANUFACTURING SYNTHETIC FILMS AND METHODS OF FABRICATION 审中-公开

    公开(公告)号：WO2021069620A1

    公开(公告)日：2021-04-15

    申请号：PCT/EP2020/078330

    申请日：2020-10-08

    Applicant: NEOCOAT SA

    Inventor： RATS, David ,  PROVENT, Christophe

    IPC: C23C16/04 ,  C23C16/27 ,  C23C16/26 ,  C23C16/34 ,  C23C16/32 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32 ,  H05H1/00

    Abstract: The invention provides a microwave plasma reactor (1) for manufacturing synthetic material via chemical vapor deposition, comprising: - a plasma enclosure (2) comprising a base plate (102), a top plate (108) and a side wall (104, 106) extending from said base plate (102); - one or several plasma sources (100) comprising at least one microwave generator (100') configured to generate microwaves in said plasma enclosure (2); - an array (10) of plasma applicators (100'''), which extremities are positioned in the plasma enclosure (2) according to a predetermined pattern, The invention is also achieved by methods of fabrication of coatings and to the use of the reactor (1) of the invention so as to provide coated samples. Such coated samples are also covered by the invention.

    METHOD FOR MANUFACTURING AN ANNULAR THIN FILM OF SYNTHETIC MATERIAL AND DEVICE FOR CARRYING OUT SAID METHOD
    2.
    发明申请
    METHOD FOR MANUFACTURING AN ANNULAR THIN FILM OF SYNTHETIC MATERIAL AND DEVICE FOR CARRYING OUT SAID METHOD 审中-公开
    制造合成材料环形薄膜的方法和实施所述方法的装置

    公开(公告)号：WO2018019669A1

    公开(公告)日：2018-02-01

    申请号：PCT/EP2017/068158

    申请日：2017-07-18

    Applicant: NEOCOAT SA

    Inventor： RATS, David ,  NAAMOUN, Medhi ,  PROVENT, Christophe

    IPC: C23C16/27 ,  H01J37/32 ,  C23C16/511

    Abstract: In the present invention a method is disclosed for producing synthetic material on a substrate by microwave plasma activated chemical vapor deposition. The method comprises the step of providing a microwave plasma reactor configured to provide a plasma having a toroidal shape. The reactor comprises a resonant cavity and a substrate holder arranged to hold, preferably, an annular shaped substrate or a plurality of substrates arranged in an annular configuration. When the reactor is in operation, it forms a plasma which has a toroidal shape and is aligned and proximate to a substrate whereupon a ring of synthetic hard material is grown over the growth surface of the substrate. The invention is also achieved by a plasma reactor that is configured to provide a plasma having a toroidal shape facing at least one substrate to be coated with an annular shaped hard material such as diamond.

    Abstract translation: 在本发明中公开了一种通过微波等离子体激活化学气相沉积在基底上制造合成材料的方法。 该方法包括提供配置成提供具有环形形状的等离子体的微波等离子体反应器的步骤。 所述反应器包括谐振腔和衬底保持器，所述衬底保持器被布置成优选地保持环形配置的环形衬底或多个衬底。 当反应器在操作中时，它形成具有环形形状的等离子体并且与衬底对准并靠近衬底，由此在衬底的生长表面上生长合成硬质材料环。 本发明还通过一种等离子体反应器来实现，该等离子体反应器被配置为提供具有环形形状的等离子体，该等离子体面向至少一个待涂覆有诸如金刚石的环形硬质材料的基板。

    PROCÉDÉ DE DÉPÔT DE DIAMANT EN PHASE VAPEUR
    3.
    发明申请
    PROCÉDÉ DE DÉPÔT DE DIAMANT EN PHASE VAPEUR 审中-公开
    金刚石蒸气沉积方法

    公开(公告)号：WO2014154424A2

    公开(公告)日：2014-10-02

    申请号：PCT/EP2014/053658

    申请日：2014-02-25

    Applicant: NEOCOAT SA

    Inventor： RATS, David ,  PROVENT, Christophe

    IPC: C23C16/04

    CPC classification number: C23C16/274 ,  B81C1/00373 ,  C01B32/25 ,  C23C16/045 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/32293 ,  H01J37/32403 ,  H01J37/32678 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01L21/02115 ,  H01L21/02274

    Abstract: La présente invention concerne un procédé de dépôt de diamant nanocristallin mettant en œuvre un équipement de dépôt de diamant en phase vapeur comprenant : - un réacteur sous vide (3) comprenant une chambre de réaction reliée à une source de vide, - une pluralité de sources de plasma, disposées selon une matrice au moins bidimensionnelle dans la chambre de réaction, - un porte-substrat (5) disposé dans le réacteur, ledit procédé étant caractérisé en ce que le dépôt est effectué à une température comprise entre 100 et 500°C.

    Abstract translation: 本发明涉及使用金刚石气相沉积设备沉积纳米晶金刚石的方法，该方法包括：真空反应器（3），其包括连接到真空源的反应室; 沿反应室中至少二维的矩阵排列的多个等离子体源; 和布置在所述反应器中的衬底保持器（5），所述方法的特征在于，所述沉积在100至500℃的温度下进行。

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