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公开(公告)号：EP1403404A4
公开(公告)日：2007-08-01
申请号：EP01934532
申请日：2001-06-04
Applicant: NEW IND RES ORGANIZATION
Inventor： KANEKO TADAAKI , ASAOKA YASUSHI , SANO NAOKATSU
Abstract: A single crystal silicon carbide which has no crystallite grain boundary inside and contains micro−pipe defects in a density of 1/cm 2 or less, and preferably has a terrace having a width of 10 μm or more and a multi−molecular layer step having a three−molecular layer as the minimum unit; a method for producing the single crystal silicon carbide which comprises a high temperature liquid phase growth method using an extremely thin Si melt layer. The method is advantageous in that it does not require precise control of the temperature difference between the surface of a growing crystal and a polycrystalline raw material and that the addition of impurities can be controlled.
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公开(公告)号：AU2002354455A1
公开(公告)日：2003-07-09
申请号：AU2002354455
申请日：2002-12-10
Applicant: NEW IND RES ORGANIZATION
Inventor： ASAOKA YASUSHI , SANO NAOKATSU , KANEKO TADAAKI
IPC: H01L21/027 , H01L21/302 , H01L21/308 , H01L21/311
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公开(公告)号：JP2003179032A
公开(公告)日：2003-06-27
申请号：JP2001377084
申请日：2001-12-11
Applicant: NEW IND RES ORGANIZATION
Inventor： KANEKO TADAAKI , ASAOKA YASUSHI , SANO NAOKATSU
IPC: B81C1/00 , H01L21/302 , H01L21/3065
Abstract: PROBLEM TO BE SOLVED: To form fine two-dimensional and three-dimensional circuit patterns used for a quantum device on a multilayer substrate surface made of an inorganic material such as Si, SiC, and GaAs. SOLUTION: On the surface of a semiconductor substrate X, an inorganic material Y layer is formed, where the inorganic material Y layer prevents the oxidation of the substrate X, and can form a stable oxide film layer chemically and thermally. On the surface of the Y layer, an inorganic material Z layer is formed, where the inorganic material Z layer prevents the oxidation of the Y layer, and can form a plurality of oxide films such as a thermally unstable natural oxide film and a forced oxide film that is chemically stable although the forced oxide film is weaker than the Y layer. After that, by metal ion implantation under the presence of a surface natural oxide film formed naturally on the surface of the Z layer or the radiation of an oxygen molecule, the surface natural oxide film is substituted for a stable forced oxide film Z' layer selectively or is produced. By the propagation of an O ion from the natural oxide film or forced oxide film Z' layer and the sputtering of the Z layer, a thermally and chemically stable oxide film Y' layer is generated in the Y layer, and then the surface of the substrate X is subjected to dry etching by a reactive etching gas. COPYRIGHT: (C)2003,JPO
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公开(公告)号：JP2003179031A
公开(公告)日：2003-06-27
申请号：JP2001377075
申请日：2001-12-11
Applicant: NEW IND RES ORGANIZATION
Inventor： KANEKO TADAAKI , ASAOKA YASUSHI , SANO NAOKATSU
IPC: G03F7/20 , B81C1/00 , H01L21/302 , H01L21/3065
Abstract: PROBLEM TO BE SOLVED: To provide an ion beam fine machining method for forming a fine circuit pattern used for a quantum device on an Si substrate surface without forming any mask for dry etching. SOLUTION: On the surface of an Si wafer substrate 1, an Al layer 2 and an Si amorphous layer 3 are formed, and then a metal ion 6 is implanted onto the surface of the Si amorphous layer 3 through a mask 5. After that, the mask 5 is removed for implanting a metal ion 9. A surface natural oxide film is selectively substituted for SiO 2 7 or is generated under the presence of a surface natural oxide film 4 that is formed on the surface of the Si amorphous layer 3 or oxygen molecule radiation, and further ions are implanted. As a result, after Al x O y 8 is produced on the surface of the Al layer 2, dry etching is made in one atom layer unit by bromide, and the surface natural oxide film other than a portion that is substituted for SiO 2 and Al x O y 8, the Si amorphous layer, the Al layer, and one portion of the Si wafer substrate are removed. COPYRIGHT: (C)2003,JPO
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