公开(公告)号：WO2019107320A1

公开(公告)日：2019-06-06

申请号：PCT/JP2018/043455

申请日：2018-11-26

Applicant: NICHIA CORPORATION ,  IMRA AMERICA, INC.

Inventor： YAMAMOTO Minoru ,  INOUE Naoto ,  TAMEMOTO Hiroaki ,  HOTTA Yoshitaka ,  OHTAKE Hideyuki

IPC: H01L33/02 ,  H01L33/32

Abstract: A method includes preparing a wafer including a substrate and a semiconductor structure, and irradiating an inner portion of a substrate at a predetermined depth in a thickness direction a plurality of times with laser pulses at a first time interval and a predetermined distance interval between irradiations.　Each irradiation performed at the first time intervals in the step of irradiating the substrate with laser pulses includes irradiating the substrate at a first focal position in the thickness direction with a first laser pulse having a first pulse-energy; and after irradiating with the first laser pulse, irradiating the substrate with a second laser pulse performed after a second time interval, the second time interval being shorter than the first time interval and being in a range of 3 ps to 900 ps, and the second laser pulse having a second pulse-energy 0.5 to 1.5 times the first pulse-energy.

公开(公告)号：EP3718148A1

公开(公告)日：2020-10-07

申请号：EP18882815.6

申请日：2018-11-26

Applicant: Nichia Corporation

Inventor： YAMAMOTO Minoru ,  INOUE Naoto ,  TAMEMOTO Hiroaki ,  HOTTA Yoshitaka ,  OHTAKE Hideyuki

IPC: H01L33/02 ,  H01L33/32